NOETZEL, RICHARD
 Distribuzione geografica
Continente #
AS - Asia 10.166
NA - Nord America 7.184
EU - Europa 2.186
SA - Sud America 1.706
Continente sconosciuto - Info sul continente non disponibili 601
AF - Africa 210
OC - Oceania 8
Totale 22.061
Nazione #
US - Stati Uniti d'America 6.803
VN - Vietnam 3.238
SG - Singapore 2.827
CN - Cina 2.002
BR - Brasile 1.296
IT - Italia 997
HK - Hong Kong 725
KR - Corea 405
BD - Bangladesh 331
FR - Francia 239
CA - Canada 206
DE - Germania 170
AR - Argentina 164
RU - Federazione Russa 150
IN - India 143
GB - Regno Unito 106
SE - Svezia 87
EC - Ecuador 84
IQ - Iraq 83
IE - Irlanda 77
AT - Austria 76
UA - Ucraina 75
MX - Messico 69
TR - Turchia 62
ID - Indonesia 57
ZA - Sudafrica 55
FI - Finlandia 47
SA - Arabia Saudita 47
PK - Pakistan 43
MA - Marocco 40
NL - Olanda 39
VE - Venezuela 36
CO - Colombia 35
UZ - Uzbekistan 32
CR - Costa Rica 28
PY - Paraguay 27
CL - Cile 26
ES - Italia 24
TN - Tunisia 24
PH - Filippine 22
EG - Egitto 21
JM - Giamaica 20
JP - Giappone 20
DK - Danimarca 17
PE - Perù 17
ET - Etiopia 16
KE - Kenya 16
PL - Polonia 16
JO - Giordania 15
MY - Malesia 14
NI - Nicaragua 12
UY - Uruguay 12
OM - Oman 10
BE - Belgio 9
BG - Bulgaria 9
DO - Repubblica Dominicana 9
NP - Nepal 9
TW - Taiwan 9
AU - Australia 8
AZ - Azerbaigian 8
CI - Costa d'Avorio 8
HN - Honduras 8
IL - Israele 8
AL - Albania 7
BH - Bahrain 7
BO - Bolivia 7
TT - Trinidad e Tobago 7
LB - Libano 6
SN - Senegal 6
AE - Emirati Arabi Uniti 5
CZ - Repubblica Ceca 5
GT - Guatemala 5
PS - Palestinian Territory 5
QA - Qatar 5
TH - Thailandia 5
BA - Bosnia-Erzegovina 4
BW - Botswana 4
CH - Svizzera 4
DZ - Algeria 4
KW - Kuwait 4
KZ - Kazakistan 4
PA - Panama 4
PR - Porto Rico 4
PT - Portogallo 4
RS - Serbia 4
SY - Repubblica araba siriana 4
GA - Gabon 3
GR - Grecia 3
IR - Iran 3
MU - Mauritius 3
NG - Nigeria 3
BS - Bahamas 2
BY - Bielorussia 2
EE - Estonia 2
GE - Georgia 2
HR - Croazia 2
LT - Lituania 2
LV - Lettonia 2
RO - Romania 2
SC - Seychelles 2
Totale 21.435
Città #
Singapore 1.176
Ho Chi Minh City 1.005
Hanoi 821
Ashburn 803
Hefei 762
San Jose 754
Hong Kong 714
Seoul 393
Milan 387
Council Bluffs 359
Chicago 243
Ann Arbor 223
Los Angeles 195
Woodbridge 170
Lauterbourg 167
Rome 130
Beijing 129
Fairfield 124
São Paulo 119
Dallas 118
Buffalo 115
Toronto 112
Houston 105
Santa Clara 99
Da Nang 98
New York 98
Haiphong 97
Ha Long 95
Seattle 79
Jacksonville 77
Wilmington 75
Dublin 73
Chandler 72
Cambridge 59
Biên Hòa 58
Hải Dương 58
Rio de Janeiro 57
Boardman 56
Guangzhou 55
Vienna 51
Frankfurt am Main 50
Can Tho 48
Thái Nguyên 48
Quận Bình Thạnh 47
Bắc Ninh 46
Philadelphia 45
Phoenix 45
Ninh Bình 44
Biloxi 43
Dearborn 43
Mexico City 39
Baghdad 36
Quận Một 36
Nanjing 35
Vũng Tàu 33
Munich 32
Atlanta 30
Bắc Giang 30
Figino 30
Turin 30
Orem 28
Princeton 28
Brasília 27
Guayaquil 27
Montreal 27
Shanghai 27
Tashkent 27
Belo Horizonte 26
Vinh 26
Phủ Lý 25
Quito 24
Dhaka 23
Brooklyn 22
Miami 22
Quận Phú Nhuận 20
Quận Sáu 20
Amsterdam 18
Des Moines 18
Falkenstein 18
San José 18
Tampa 18
Thái Bình 18
Điện Bàn 18
Baltimore 17
Columbus 17
Dong Ket 17
Goiânia 17
Helsinki 17
Jeddah 17
Las Vegas 17
Moscow 17
Salt Lake City 17
Addis Ababa 16
Porto Alegre 16
Salvador 16
Tokyo 16
Caracas 15
Casablanca 15
Curitiba 15
Istanbul 15
Totale 11.973
Nome #
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 505
Dual-wavelength passive and hybrid modelocking of 3, 4.5 and 10 GHz InAs/InP (100) quantum dot lasers 439
Size-dependent exciton g factor in self-assembled InAs/InP quantum dots 397
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 370
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth 366
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides 347
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 324
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized 321
1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy 283
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 278
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy 265
Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces 262
Recombination kinetics of InAs quantum dots: role of thermalization in dark states 246
Epitaxial InN/InGaN quantum dots on Si: Cl% anion selectivity and pseudocapacitor behavior 236
Site-controlled Ag nanocrystals grown by molecular beam epitaxy - Towards plasmonic integration technology 234
Exciton dark states in the recombination kinetics of InAs quantum dots 233
Gain and phase dynamics of an InAs/InGaAsP/InP quantum-dot semiconductor optical amplifier at 1.55 μm 227
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces 220
Quantum dot decoherence measured by ensemble photoluminescence 219
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires 218
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires 216
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal 204
Temperature activated coupling in topologically distinct semiconductor nanostructures 197
Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots 175
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red 171
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate 170
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires 162
Wood-derived electrode supporting CVD-grown ReS2 for efficient and stable hydrogen production 158
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates 152
ZIF-67 with Argon annealing treatment for visible light responsive degradation of organic dyes in a wide pH range 144
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling 137
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors 133
Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics 133
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181) 131
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors 128
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity 128
Uniform low-to-high in composition InGaN layers grown on Si 127
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study 127
Noise logic with an InGaN/SiNx/Si uniband diode photodetector 126
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red 126
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement 124
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing 123
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN 119
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN 116
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer 115
Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 113
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111) 113
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions 112
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector 112
InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 μ m wavelength region for tunable laser purposes 112
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions 111
Near-infrared InN quantum dots on high-In composition InGaN 109
InAs/InP quantum dots, dashes, and ordered arrays 108
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption 108
Transfer printing and nanomanipulating luminescent photonic crystal membrane nanocavities 106
An InN/InGaN quantum dot nonlinear constant phase element 106
Self-formed core–shell InGaN nanowires: A dual-functional platform for persistent photoconductivity and self-driven photodetection 105
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy 105
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range 105
Synthesis of barbituric acid doped carbon nitride for efficient solar-driven photocatalytic degradation of aniline 104
InP/InGaAs photodetector on SOI photonic circuitry 103
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting 102
Acoustic carrier transport in InP-based structures 102
InP/InGaAs photodetector on SOI circuitry 101
Tuning of narrow-bandwidth photonic crystal devices etched in InGaAsP planar waveguides by Liquid Crystal infiltration 101
160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network 100
Cu2O as hole injection layer on In-rich InGaN nanowires 99
Scalable quantum dot based optical interconnects 98
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm 97
Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructures 96
Electromechanical wavelength tuning of double-membrane photonic crystal cavities 96
Passively mode-locked 4.6 and 10.5GHz quantum dot laser diodes around 1.55m with large operating regime 95
Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core-shell InGaN nanowires 95
Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region 95
An InN/InGaN quantum dot electrochemical biosensor for clinical diagnosis 95
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy 95
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals 93
Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning 93
Coupling of InAs/InP quantum dots to the plasmon resonance of in nanoparticles grown by metal-organic vapor phase epitaxy 93
InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing 93
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range 93
An InGaN/SiN x/Si Uniband Diode 92
Resonant biexciton quantum-dot cavity coupling and its potential for a fast 1.55- m-telecom-band single photon source 91
Spontaneous formation of InGaN nanowall network directly on Si 91
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots 91
Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy 91
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) 91
Observation of Dynamics in a 5 GHz Passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 μm 90
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate 90
Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays 90
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm 90
Low power penalty monolithically-cascaded 1550nm-wavelength quantum-dot crossbar switches 90
Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea 89
Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy 89
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy 88
Monolithic multistage optical switch operating at 160 Gb/s line rate 87
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal 87
Nanowire superconducting single-photon detectors integrated with optical microcavities based on GaAs substrates 87
In situ optofluidic control of reconfigurable photonic crystal cavities 87
Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 μm to 1.8 μm region 86
Totale 14.993
Categoria #
all - tutte 56.597
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.597


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022101 0 0 0 8 8 8 13 9 5 8 14 28
2022/2023264 32 75 20 14 17 40 3 20 22 2 13 6
2023/2024158 5 6 11 2 13 40 43 2 20 0 2 14
2024/20252.689 14 51 18 16 37 20 23 28 36 51 1.192 1.203
2025/202614.032 2.241 2.406 1.154 1.763 795 372 1.094 672 854 917 468 1.296
2026/20273.432 630 462 1.445 895 0 0 0 0 0 0 0 0
Totale 22.061