Bicocca Open Archive

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NOETZEL, RICHARD
 Distribuzione geografica
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Continente #
AS - Asia 7.833
NA - Nord America 2.168
SA - Sud America 1.438
EU - Europa 924
AF - Africa 84
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 12.450
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Nazione #
VN - Vietnam 2.833
US - Stati Uniti d'America 2.060
SG - Singapore 2.033
CN - Cina 1.695
BR - Brasile 1.166
HK - Hong Kong 667
KR - Corea 352
AR - Argentina 132
RU - Federazione Russa 129
DE - Germania 127
IT - Italia 122
SE - Svezia 87
AT - Austria 76
IE - Irlanda 75
GB - Regno Unito 73
UA - Ucraina 66
EC - Ecuador 60
BD - Bangladesh 54
CA - Canada 47
MX - Messico 44
FR - Francia 41
FI - Finlandia 38
ID - Indonesia 38
IN - India 35
ZA - Sudafrica 30
NL - Olanda 27
TR - Turchia 27
IQ - Iraq 24
PY - Paraguay 24
MA - Marocco 16
DK - Danimarca 15
CO - Colombia 13
PL - Polonia 12
VE - Venezuela 12
CL - Cile 11
PE - Perù 11
EG - Egitto 10
TN - Tunisia 10
JP - Giappone 9
PK - Pakistan 9
UY - Uruguay 9
KE - Kenya 8
UZ - Uzbekistan 8
BE - Belgio 7
BG - Bulgaria 7
ES - Italia 7
JO - Giordania 6
CR - Costa Rica 5
SA - Arabia Saudita 5
AZ - Azerbaigian 4
BH - Bahrain 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
IL - Israele 4
MY - Malesia 4
OM - Oman 4
AE - Emirati Arabi Uniti 3
KW - Kuwait 3
TW - Taiwan 3
AL - Albania 2
BW - Botswana 2
ET - Etiopia 2
IR - Iran 2
JM - Giamaica 2
MU - Mauritius 2
NP - Nepal 2
SV - El Salvador 2
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
CH - Svizzera 1
CI - Costa d'Avorio 1
EU - Europa 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
HR - Croazia 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
LV - Lettonia 1
NG - Nigeria 1
NO - Norvegia 1
PH - Filippine 1
PS - Palestinian Territory 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TT - Trinidad e Tobago 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 12.450
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Città #
Singapore 947
Ho Chi Minh City 889
Hefei 761
Hanoi 703
Hong Kong 665
Seoul 348
Ann Arbor 223
Ashburn 191
Woodbridge 168
Fairfield 124
Los Angeles 117
Beijing 114
São Paulo 105
Buffalo 95
Ha Long 93
Haiphong 85
Dallas 83
Houston 81
Da Nang 79
Wilmington 73
Dublin 72
Chandler 71
Jacksonville 63
Cambridge 58
Seattle 57
Biên Hòa 53
Hải Dương 51
Vienna 51
Rio de Janeiro 50
Guangzhou 49
Quận Bình Thạnh 46
Thái Nguyên 46
Bắc Ninh 44
Can Tho 43
Dearborn 43
Ninh Bình 43
Frankfurt am Main 40
Milan 40
New York 37
Santa Clara 37
Quận Một 36
Chicago 35
Vũng Tàu 33
Munich 32
Nanjing 31
Bắc Giang 28
Princeton 28
Mexico City 25
Belo Horizonte 24
Phủ Lý 24
Vinh 24
Shanghai 23
Guayaquil 22
Brasília 21
Quận Phú Nhuận 20
Quận Sáu 20
Falkenstein 18
Dong Ket 17
Goiânia 17
Điện Bàn 17
Thái Bình 16
Quận Tân Phú 15
Salvador 15
Council Bluffs 14
Montreal 14
Moscow 14
Porto Alegre 14
Quito 14
Amsterdam 13
Curitiba 13
Des Moines 13
Helsinki 13
Lawrence 13
Huế 12
Lang Son 12
Nuremberg 12
Quảng Ninh 12
Tampa 12
Thu Dau Mot 12
Uyen Hung 12
Altamura 11
Bình Dương 11
Dhaka 11
Tianjin 11
Turku 11
Asunción 10
Hòa Bình 10
Lachine 10
Lấp Vò 10
Quận Bảy 10
Quận Mười 10
Quận Ninh Kiều 10
Quận Năm 10
Thanh Hóa 10
Đồng Nai Province 10
Buenos Aires 9
Bến Cầu 9
Jinan 9
London 9
Nam Định 9
Totale 7.898
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Nome #
Dual-wavelength passive and hybrid modelocking of 3, 4.5 and 10 GHz InAs/InP (100) quantum dot lasers 387
Size-dependent exciton g factor in self-assembled InAs/InP quantum dots 351
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth 331
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 329
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides 310
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 287
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 245
1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy 224
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy 207
Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces 202
Site-controlled Ag nanocrystals grown by molecular beam epitaxy - Towards plasmonic integration technology 201
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized 200
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 197
Recombination kinetics of InAs quantum dots: role of thermalization in dark states 182
Gain and phase dynamics of an InAs/InGaAsP/InP quantum-dot semiconductor optical amplifier at 1.55 μm 179
Exciton dark states in the recombination kinetics of InAs quantum dots 177
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires 171
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces 171
Quantum dot decoherence measured by ensemble photoluminescence 171
Epitaxial InN/InGaN quantum dots on Si: Cl% anion selectivity and pseudocapacitor behavior 163
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal 160
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires 160
Temperature activated coupling in topologically distinct semiconductor nanostructures 151
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate 136
Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots 132
Wood-derived electrode supporting CVD-grown ReS2 for efficient and stable hydrogen production 121
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates 120
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires 107
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling 90
Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics 77
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red 75
InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 μ m wavelength region for tunable laser purposes 75
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions 70
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181) 70
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red 70
160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network 69
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement 68
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors 67
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer 67
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN 66
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity 65
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111) 65
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions 63
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing 63
ZIF-67 with Argon annealing treatment for visible light responsive degradation of organic dyes in a wide pH range 62
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting 62
Noise logic with an InGaN/SiNx/Si uniband diode photodetector 61
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study 60
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption 60
An InN/InGaN quantum dot nonlinear constant phase element 60
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector 58
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy 57
Tuning of narrow-bandwidth photonic crystal devices etched in InGaAsP planar waveguides by Liquid Crystal infiltration 57
Acoustic carrier transport in InP-based structures 56
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN 56
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range 55
Dual wavelength mode-locking of InAs/InP quantum dot laser diodes at 1.5μm 54
Transfer printing and nanomanipulating luminescent photonic crystal membrane nanocavities 53
Scalable quantum dot based optical interconnects 53
InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing 53
Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region 52
Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning 52
Nanowire superconducting single-photon detectors integrated with optical microcavities based on GaAs substrates 52
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal 52
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals 51
InP/InGaAs photodetector on SOI circuitry 51
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) 51
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors 50
Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control 50
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal 49
On the super-Nernstian potentiometric response of InN/InGaN quantum dots 49
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate 49
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots 49
Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 49
Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals 49
Wavelength tuning of planar photonic crystals by local processing of individual holes 49
Comparison of the Extended Gate Field-Effect Transistor with Direct Potentiometric Sensing for Super-Nernstian InN/InGaN Quantum Dots 48
Uniform low-to-high in composition InGaN layers grown on Si 48
Room temperature CW operation of metal-semiconductor plasmonic nanolasers with subwavelength cavity 48
Monolithic multistage optoelectronic switch circuit routing 160 Gb/s line-rate data 47
Monolithic multistage optical switch operating at 160 Gb/s line rate 47
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm 47
CW operation of a subwavelength metal-semiconductor nanolaser at record high temperature under electrical injection 47
Observation of Dynamics in a 5 GHz Passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 μm 46
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy 46
Enhanced terahertz radiation from InAs (100) with an embedded InGaAs hole blocking layer 46
160Gbit/s line-rate data routing through monolithic multi-stage optical switch circuit 46
Recent advances in long wavelength quantum dot lasers and amplifiers 46
Electromechanical wavelength tuning of double-membrane photonic crystal cavities 46
Passively mode-locked 4.6 and 10.5GHz quantum dot laser diodes around 1.55m with large operating regime 45
Electromechanically tunable photonic crystal cavities 45
Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays 45
Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructures 45
Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B 45
Birefringence-induced mode-dependent tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 44
InAs/InP quantum dots, dashes, and ordered arrays 44
Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy 44
Sagnac loop reflector and arrayed waveguide grating-based multi-wavelength laser monolithically integrated on InP 44
Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates 44
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm 43
Totale 9.709
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Categoria #
all - tutte 31.600
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 31.600
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021214 0 0 0 0 0 31 27 28 29 35 17 47
2021/2022161 11 22 27 8 8 8 13 9 5 8 14 28
2022/2023264 32 75 20 14 17 40 3 20 22 2 13 6
2023/2024158 5 6 11 2 13 40 43 2 20 0 2 14
2024/20252.689 14 51 18 16 37 20 23 28 36 51 1.192 1.203
2025/20268.448 2.241 2.406 1.154 1.763 795 89 0 0 0 0 0 0
Totale 13.045