Bicocca Open Archive

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NOETZEL, RICHARD
 Distribuzione geografica
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Continente #
AS - Asia 10.019
NA - Nord America 3.809
SA - Sud America 1.694
EU - Europa 1.454
AF - Africa 208
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 3
Totale 17.194
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Nazione #
US - Stati Uniti d'America 3.529
VN - Vietnam 3.224
SG - Singapore 2.815
CN - Cina 1.991
BR - Brasile 1.290
HK - Hong Kong 722
KR - Corea 403
IT - Italia 330
BD - Bangladesh 237
FR - Francia 231
AR - Argentina 162
CA - Canada 158
RU - Federazione Russa 149
DE - Germania 148
IN - India 142
GB - Regno Unito 87
SE - Svezia 87
IQ - Iraq 83
EC - Ecuador 81
IE - Irlanda 77
AT - Austria 76
UA - Ucraina 75
MX - Messico 66
TR - Turchia 62
ID - Indonesia 56
ZA - Sudafrica 55
FI - Finlandia 47
SA - Arabia Saudita 43
PK - Pakistan 42
MA - Marocco 40
VE - Venezuela 36
CO - Colombia 35
NL - Olanda 35
UZ - Uzbekistan 32
PY - Paraguay 27
CL - Cile 26
TN - Tunisia 24
ES - Italia 22
PH - Filippine 22
EG - Egitto 21
JP - Giappone 18
PE - Perù 17
DK - Danimarca 16
ET - Etiopia 16
KE - Kenya 16
JO - Giordania 15
PL - Polonia 15
MY - Malesia 14
CR - Costa Rica 13
UY - Uruguay 12
JM - Giamaica 10
OM - Oman 10
NP - Nepal 9
AZ - Azerbaigian 8
BE - Belgio 8
BG - Bulgaria 8
CI - Costa d'Avorio 8
DO - Repubblica Dominicana 8
IL - Israele 8
AL - Albania 7
AU - Australia 7
BH - Bahrain 7
BO - Bolivia 7
NI - Nicaragua 7
TW - Taiwan 7
LB - Libano 6
SN - Senegal 6
AE - Emirati Arabi Uniti 5
CZ - Repubblica Ceca 5
PS - Palestinian Territory 5
QA - Qatar 5
TH - Thailandia 5
BA - Bosnia-Erzegovina 4
BW - Botswana 4
DZ - Algeria 4
HN - Honduras 4
KW - Kuwait 4
KZ - Kazakistan 4
PA - Panama 4
PT - Portogallo 4
RS - Serbia 4
SY - Repubblica araba siriana 4
CH - Svizzera 3
GA - Gabon 3
GR - Grecia 3
GT - Guatemala 3
IR - Iran 3
MU - Mauritius 3
NG - Nigeria 3
TT - Trinidad e Tobago 3
BY - Bielorussia 2
GE - Georgia 2
HR - Croazia 2
LT - Lituania 2
LV - Lettonia 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
XK - ???statistics.table.value.countryCode.XK??? 2
BB - Barbados 1
Totale 17.179
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Città #
Singapore 1.171
Ho Chi Minh City 1.001
Hanoi 815
Hefei 762
Hong Kong 711
San Jose 555
Seoul 393
Ashburn 285
Chicago 226
Ann Arbor 223
Woodbridge 168
Lauterbourg 167
Los Angeles 160
Beijing 126
Fairfield 124
São Paulo 117
Buffalo 107
Toronto 104
Da Nang 98
Haiphong 97
Ha Long 95
Dallas 92
Houston 92
New York 74
Wilmington 74
Dublin 73
Jacksonville 72
Chandler 71
Council Bluffs 64
Biên Hòa 58
Cambridge 58
Hải Dương 58
Seattle 58
Rio de Janeiro 57
Boardman 56
Guangzhou 55
Vienna 51
Frankfurt am Main 49
Can Tho 48
Thái Nguyên 48
Milan 47
Quận Bình Thạnh 47
Bắc Ninh 46
Santa Clara 46
Ninh Bình 44
Dearborn 43
Mexico City 37
Baghdad 36
Quận Một 36
Nanjing 35
Vũng Tàu 33
Munich 32
Bắc Giang 30
Orem 28
Princeton 28
Tashkent 27
Belo Horizonte 26
Guayaquil 26
Shanghai 26
Vinh 26
Brasília 25
Phủ Lý 25
Dhaka 23
Quito 23
Montreal 22
Quận Phú Nhuận 20
Quận Sáu 20
Amsterdam 18
Falkenstein 18
Thái Bình 18
Điện Bàn 18
Dong Ket 17
Goiânia 17
Helsinki 17
Moscow 17
Addis Ababa 16
Des Moines 16
Jeddah 16
Porto Alegre 16
Salvador 16
Caracas 15
Casablanca 15
Curitiba 15
Istanbul 15
Johannesburg 15
Quận Tân Phú 15
Riyadh 15
Tampa 15
Amman 14
Lima 14
Tokyo 14
Atlanta 13
Huế 13
Lahore 13
Lawrence 13
Nairobi 13
Nuremberg 13
Thu Dau Mot 13
Bogotá 12
Buenos Aires 12
Totale 10.067
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Nome #
Dual-wavelength passive and hybrid modelocking of 3, 4.5 and 10 GHz InAs/InP (100) quantum dot lasers 410
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 405
Size-dependent exciton g factor in self-assembled InAs/InP quantum dots 374
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth 348
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 337
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides 336
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 288
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized 268
1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy 251
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 247
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy 245
Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces 238
Epitaxial InN/InGaN quantum dots on Si: Cl% anion selectivity and pseudocapacitor behavior 221
Recombination kinetics of InAs quantum dots: role of thermalization in dark states 220
Site-controlled Ag nanocrystals grown by molecular beam epitaxy - Towards plasmonic integration technology 218
Exciton dark states in the recombination kinetics of InAs quantum dots 209
Gain and phase dynamics of an InAs/InGaAsP/InP quantum-dot semiconductor optical amplifier at 1.55 μm 203
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces 199
Quantum dot decoherence measured by ensemble photoluminescence 198
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires 197
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires 188
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal 185
Temperature activated coupling in topologically distinct semiconductor nanostructures 184
Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots 159
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate 157
Wood-derived electrode supporting CVD-grown ReS2 for efficient and stable hydrogen production 141
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates 136
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires 131
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red 117
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling 117
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181) 112
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing 106
Uniform low-to-high in composition InGaN layers grown on Si 105
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity 103
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement 101
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors 100
InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 μ m wavelength region for tunable laser purposes 98
Noise logic with an InGaN/SiNx/Si uniband diode photodetector 96
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors 93
Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics 93
Near-infrared InN quantum dots on high-In composition InGaN 93
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111) 92
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN 92
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red 92
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions 91
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer 90
ZIF-67 with Argon annealing treatment for visible light responsive degradation of organic dyes in a wide pH range 89
160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network 88
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN 87
An InN/InGaN quantum dot nonlinear constant phase element 86
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions 84
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting 84
InP/InGaAs photodetector on SOI circuitry 83
InP/InGaAs photodetector on SOI photonic circuitry 82
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study 82
Acoustic carrier transport in InP-based structures 82
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption 82
Transfer printing and nanomanipulating luminescent photonic crystal membrane nanocavities 81
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector 81
Tuning of narrow-bandwidth photonic crystal devices etched in InGaAsP planar waveguides by Liquid Crystal infiltration 81
Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning 80
Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 79
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range 79
Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region 78
Scalable quantum dot based optical interconnects 77
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy 76
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals 75
Spontaneous formation of InGaN nanowall network directly on Si 75
In situ optofluidic control of reconfigurable photonic crystal cavities 75
Dual wavelength mode-locking of InAs/InP quantum dot laser diodes at 1.5μm 74
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm 74
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots 73
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy 73
Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy 73
Electromechanical wavelength tuning of double-membrane photonic crystal cavities 73
CW operation of a subwavelength metal-semiconductor nanolaser at record high temperature under electrical injection 73
Semiconductor nanostructures towards electronic and optoelectronic device applications II (Symposium K, E-MRS 2009 Spring Meeting) 72
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate 72
Coupling of InAs/InP quantum dots to the plasmon resonance of in nanoparticles grown by metal-organic vapor phase epitaxy 72
An InN/InGaN quantum dot electrochemical biosensor for clinical diagnosis 72
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal 71
Observation of Dynamics in a 5 GHz Passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 μm 71
Nanowire superconducting single-photon detectors integrated with optical microcavities based on GaAs substrates 71
InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing 71
Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals 71
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range 71
Monolithic multistage optical switch operating at 160 Gb/s line rate 70
Ordered 1-D and 2-D InAs/InP quantum dot arrays at telecom wavelength 70
Electrical injection, continuous wave operation of subwavelength-metallic- cavity lasers at 260 K 70
Low power penalty monolithically-cascaded 1550nm-wavelength quantum-dot crossbar switches 70
Formation of site-controlled InAs/InP quantum dots and their integration into planar structures 69
Room temperature CW operation of metal-semiconductor plasmonic nanolasers with subwavelength cavity 69
Resonant biexciton quantum-dot cavity coupling and its potential for a fast 1.55- m-telecom-band single photon source 68
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm 68
On the super-Nernstian potentiometric response of InN/InGaN quantum dots 68
Cu2O as hole injection layer on In-rich InGaN nanowires 68
Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy 68
Recent advances in long wavelength quantum dot lasers and amplifiers 68
Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays 67
Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructures 67
Totale 12.537
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Categoria #
all - tutte 43.764
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.764
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202147 0 0 0 0 0 0 0 0 0 0 0 47
2021/2022161 11 22 27 8 8 8 13 9 5 8 14 28
2022/2023264 32 75 20 14 17 40 3 20 22 2 13 6
2023/2024158 5 6 11 2 13 40 43 2 20 0 2 14
2024/20252.689 14 51 18 16 37 20 23 28 36 51 1.192 1.203
2025/202613.195 2.241 2.406 1.154 1.763 795 372 1.094 672 854 917 468 459
Totale 17.792