Uniform, compact, and thick InGaN layers are grown on Si(111) substrates by plasma-assisted molecular beam epitaxy without any buffer layers at low temperatures of around 320 °C. By adjusting the Ga/In flux ratio, InGaN layers with In compositions between 10 and 33% are obtained, providing emission covering the whole visible spectral range. The In composition varies less than 2% over large areas, and the singlecrystalline hexagonal InGaN layers have a well-defined epitaxial relationship with the Si substrate. Photoluminescence is observed up to room temperature, opening the prospect for the direct integration of InGaN light-emitting devices with Si technology. © 2013 The Japan Society of Applied Physics.
Aseev, P., Rodriguez, P., Kumar, P., Gomez, V., Alvi, N., Manuel, J., et al. (2013). Uniform low-to-high in composition InGaN layers grown on Si. APPLIED PHYSICS EXPRESS, 6(11) [10.7567/APEX.6.115503].
Uniform low-to-high in composition InGaN layers grown on Si
Notzel R.
2013
Abstract
Uniform, compact, and thick InGaN layers are grown on Si(111) substrates by plasma-assisted molecular beam epitaxy without any buffer layers at low temperatures of around 320 °C. By adjusting the Ga/In flux ratio, InGaN layers with In compositions between 10 and 33% are obtained, providing emission covering the whole visible spectral range. The In composition varies less than 2% over large areas, and the singlecrystalline hexagonal InGaN layers have a well-defined epitaxial relationship with the Si substrate. Photoluminescence is observed up to room temperature, opening the prospect for the direct integration of InGaN light-emitting devices with Si technology. © 2013 The Japan Society of Applied Physics.
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