n-InGaN/p-Cu2O core-shell nanowire (NW) p-n junctions enable efficient self-powered photoelectrochemical photodetectors (PEC PDs) in the visible. The photocurrent density under one-sun illumination is enhanced by 8 times compared to that of bare InGaN NW PEC PDs due to maximized photocarrier separation in the built-in electric field of the p-n junction. The responsivity reaches 173 μA/W under one-sun illumination. The response times of 30-40 ms are among the shortest achieved for PEC PDs. Together with the long-time stability and reusability, a robust, easy to fabricate, and easy to operate self-powered PEC PD is introduced.
Wang, J., Song, J., Qin, L., Peng, Y., Notzel, R. (2022). Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions. APPLIED PHYSICS LETTERS, 120(11) [10.1063/5.0082509].
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions
Notzel R.
2022
Abstract
n-InGaN/p-Cu2O core-shell nanowire (NW) p-n junctions enable efficient self-powered photoelectrochemical photodetectors (PEC PDs) in the visible. The photocurrent density under one-sun illumination is enhanced by 8 times compared to that of bare InGaN NW PEC PDs due to maximized photocarrier separation in the built-in electric field of the p-n junction. The responsivity reaches 173 μA/W under one-sun illumination. The response times of 30-40 ms are among the shortest achieved for PEC PDs. Together with the long-time stability and reusability, a robust, easy to fabricate, and easy to operate self-powered PEC PD is introduced.
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