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BOSI, GIANNI
 Distribuzione geografica
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Continente #
AS - Asia 2.048
NA - Nord America 1.236
EU - Europa 1.141
SA - Sud America 417
AF - Africa 36
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 4.881
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Nazione #
US - Stati Uniti d'America 1.186
SG - Singapore 726
CN - Cina 457
HK - Hong Kong 457
RU - Federazione Russa 414
BR - Brasile 349
IT - Italia 214
VN - Vietnam 175
IE - Irlanda 147
SE - Svezia 120
DE - Germania 96
KR - Corea 77
GB - Regno Unito 33
AR - Argentina 31
CA - Canada 29
ID - Indonesia 29
IN - India 25
UA - Ucraina 25
BD - Bangladesh 19
AT - Austria 17
NL - Olanda 16
MX - Messico 15
PL - Polonia 13
IQ - Iraq 12
VE - Venezuela 12
ZA - Sudafrica 12
JP - Giappone 11
EC - Ecuador 10
ES - Italia 10
TR - Turchia 10
PK - Pakistan 9
SA - Arabia Saudita 9
FI - Finlandia 8
TW - Taiwan 7
KE - Kenya 5
LT - Lituania 5
MA - Marocco 5
PY - Paraguay 5
UZ - Uzbekistan 5
CH - Svizzera 4
CZ - Repubblica Ceca 4
PH - Filippine 4
AE - Emirati Arabi Uniti 3
AL - Albania 3
BG - Bulgaria 3
CL - Cile 3
DO - Repubblica Dominicana 3
DZ - Algeria 3
EG - Egitto 3
UY - Uruguay 3
AM - Armenia 2
CO - Colombia 2
ET - Etiopia 2
FR - Francia 2
IR - Iran 2
JM - Giamaica 2
RO - Romania 2
AO - Angola 1
AU - Australia 1
AZ - Azerbaigian 1
BO - Bolivia 1
BY - Bielorussia 1
CR - Costa Rica 1
CY - Cipro 1
DJ - Gibuti 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GR - Grecia 1
HU - Ungheria 1
JO - Giordania 1
KZ - Kazakistan 1
LB - Libano 1
MY - Malesia 1
NA - Namibia 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
PT - Portogallo 1
SI - Slovenia 1
SN - Senegal 1
SX - ???statistics.table.value.countryCode.SX??? 1
TN - Tunisia 1
Totale 4.881
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Città #
Hong Kong 457
Singapore 396
Ashburn 150
Hefei 149
Dublin 139
New York 121
Santa Clara 103
Beijing 94
Milan 90
Dallas 86
Seoul 72
Los Angeles 63
Ho Chi Minh City 53
Frankfurt am Main 47
Hanoi 46
Moscow 44
Princeton 42
São Paulo 37
Buffalo 24
Ferrara 24
Chicago 23
Lawrence 20
Nuremberg 20
Jakarta 19
Montreal 17
The Dalles 17
Ann Arbor 16
Bologna 16
Chandler 16
Rome 14
Brasília 12
Guangzhou 11
Tokyo 11
Biên Hòa 10
Boston 10
Fairfield 10
Orem 10
San Giuseppe Vesuviano 10
Warsaw 10
Wilmington 10
Brooklyn 9
Phoenix 9
San Diego 9
Denver 8
Rio de Janeiro 8
Salt Lake City 8
Andover 7
Cambridge 7
Guarulhos 7
Hải Dương 7
Lappeenranta 7
Pune 7
Seattle 7
Shanghai 7
Vienna 7
Houston 6
Manchester 6
Miami 6
Salvador 6
Stockholm 6
Ankara 5
Atlanta 5
Basra 5
Belo Horizonte 5
Da Nang 5
Johannesburg 5
Kent 5
Lahore 5
London 5
Nairobi 5
Poplar 5
San Francisco 5
Taipei 5
Toronto 5
Altamura 4
Cotia 4
Guayaquil 4
Haiphong 4
Huskvarna 4
Irecê 4
Lancaster 4
Mumbai 4
Munich 4
Peschiera Borromeo 4
Porto Alegre 4
Riyadh 4
Santo André 4
Tashkent 4
Volta Redonda 4
Amsterdam 3
Asunción 3
Buenos Aires 3
Bắc Giang 3
Bắc Ninh 3
Cairo 3
Castel Maggiore 3
Caxias do Sul 3
Changsha 3
Currais Novos 3
Delhi 3
Totale 2.826
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Nome #
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements 136
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 133
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 125
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach 125
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 124
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 122
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 121
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 119
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 118
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 115
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 109
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 105
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 103
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 100
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 97
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 96
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 93
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 88
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 87
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 87
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 86
Extended operation of class-F power amplifiers using input waveform engineering 86
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 84
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 82
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 81
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 78
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 77
Behavioral Modeling of GaN FETs: a Load-Line Approach 77
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 74
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 73
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 71
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 70
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 70
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 67
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 67
A neural network approach for nonlinear modelling of LDMOSFETs 66
Waveform engineering: State-of-the-art and future trends (invited paper) 64
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 63
75-VDC GaN technology investigation from a degradation perspective 62
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 61
Impact of transistor model uncertainty on microwave load-pull simulations 61
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 61
Linear versus nonlinear de-embedding: Experimental investigation 61
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 61
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 61
Maximizing the benefit of existing equipment for nonlinear and communication measurements 60
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 60
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 60
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 58
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 58
Gate waveform effects on high-efficiency PA design: An experimental validation 57
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 55
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 55
Extremely Low-Frequency Measurements Using an Active Bias Tee 55
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 54
A new description of fast charge-trapping effects in GaN FETs 54
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 53
Microwave FET model identification based on vector intermodulation measurements 52
Evaluation of FET performance and restrictions by low-frequency measurements 50
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 49
Non-linear look-up table modeling of GaAs HEMTs for mixer application 49
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 49
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 48
A GaN power amplifier for 100 VDC bus in GPS L-band 47
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 47
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 46
Totale 5.083
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Categoria #
all - tutte 26.482
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.482
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022202 0 0 0 0 0 0 81 16 3 1 17 84
2022/2023347 32 88 33 7 26 115 3 22 8 5 3 5
2023/2024446 12 5 5 22 70 132 81 10 58 7 5 39
2024/20251.899 72 204 44 127 156 29 104 81 139 327 169 447
2025/20262.189 424 418 316 602 368 61 0 0 0 0 0 0
Totale 5.083