This paper presents a high gain programmable 1.2V to 18V, 25-stage Charge Pump (CP) system with an on-chip generated clock signal for MEMS sensors biasing applications. This CP features an innovative structure to bootstrap the pumping switches that allows the use of specific high-voltage transistors to be avoided, since the voltage drop across any device is never higher than the supply voltage. The output voltage of the CP can be trimmed by varying its input voltage, provided through an Operational Transconductance Amplifier (OTA) feedbacked with a digitally programmable resistive divider, designed in such a way to get the regulated voltage to be an exponential function of the 6-bit trimming code. The clock signal to drive the CP is generated on-chip by a low-voltage and low-power Relaxation Oscillator (RxO). The proposed Charge Pump system reaches a maximum output voltage of 18V, draining from the 1.2V supply a total power of 2.6μW and using a total silicon area of 0.06mm2
Lanteri, A., Sant, L., Gaggl, R., Baschirotto, A. (2025). A programmable 1.2V to 18V Charge Pump with an internal 500kHz clock in 55nm CMOS. In 2025 32nd IEEE International Conference on Electronics, Circuits and Systems, ICECS 2025 (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICECS66544.2025.11270694].
A programmable 1.2V to 18V Charge Pump with an internal 500kHz clock in 55nm CMOS
Baschirotto A.
2025
Abstract
This paper presents a high gain programmable 1.2V to 18V, 25-stage Charge Pump (CP) system with an on-chip generated clock signal for MEMS sensors biasing applications. This CP features an innovative structure to bootstrap the pumping switches that allows the use of specific high-voltage transistors to be avoided, since the voltage drop across any device is never higher than the supply voltage. The output voltage of the CP can be trimmed by varying its input voltage, provided through an Operational Transconductance Amplifier (OTA) feedbacked with a digitally programmable resistive divider, designed in such a way to get the regulated voltage to be an exponential function of the 6-bit trimming code. The clock signal to drive the CP is generated on-chip by a low-voltage and low-power Relaxation Oscillator (RxO). The proposed Charge Pump system reaches a maximum output voltage of 18V, draining from the 1.2V supply a total power of 2.6μW and using a total silicon area of 0.06mm2
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