In this work an analog Integrate-And-Fire Neuron is described and implemented in 7 nm FinFET technology. The circuit operates at a power supply voltage of 750 mV and features an operational-amplifier-based comparator to set an explicit spiking threshold voltage. A capacitive positive feedback is employed, alongside a stage which resets the membrane potential after a spike generation. The circuit was simulated with transistor models which account for parasitics effects and transient simulations for nA input synaptic currents are reported, with a peak current drawn from the power supply of 4 uA. The circuit operates on an accelerated timescale from units to tens of us, is equipped with external voltage biases to tune the membrane leak current, refractory period, and pulse width after silicon fabrication, hence suitable for developing mixed-signal neuromorphic architectures.

Stevenazzi, L., Baschirotto, A., De Matteis, M. (2025). Analog Integrate-And-Fire Neuron in 7 nm FinFET Technology. In 2025 International Conference on IC Design and Technology, ICICDT 2025 (pp.81-84). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11077981].

Analog Integrate-And-Fire Neuron in 7 nm FinFET Technology

Stevenazzi L.;Baschirotto A.;De Matteis M.
2025

Abstract

In this work an analog Integrate-And-Fire Neuron is described and implemented in 7 nm FinFET technology. The circuit operates at a power supply voltage of 750 mV and features an operational-amplifier-based comparator to set an explicit spiking threshold voltage. A capacitive positive feedback is employed, alongside a stage which resets the membrane potential after a spike generation. The circuit was simulated with transistor models which account for parasitics effects and transient simulations for nA input synaptic currents are reported, with a peak current drawn from the power supply of 4 uA. The circuit operates on an accelerated timescale from units to tens of us, is equipped with external voltage biases to tune the membrane leak current, refractory period, and pulse width after silicon fabrication, hence suitable for developing mixed-signal neuromorphic architectures.
paper
Analog Circuit; FinFET; Neural Network; Neuromorphic Hardware; Spiking Neuron;
English
2025 International Conference on IC Design and Technology, ICICDT 2025 - 23-25 June 2025
2025
2025 International Conference on IC Design and Technology, ICICDT 2025
9798331524616
2025
81
84
none
Stevenazzi, L., Baschirotto, A., De Matteis, M. (2025). Analog Integrate-And-Fire Neuron in 7 nm FinFET Technology. In 2025 International Conference on IC Design and Technology, ICICDT 2025 (pp.81-84). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICICDT65192.2025.11077981].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/590861
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