In this paper we present the design and electrical simulations of a Hardening-by-Design current starved Voltage Controlled Oscillator (VCO). This VCO is designed to be a core component of a rad-hard Phase Locked Loop (PLL) functioning as a clock generator with a target output frequency of 900 MHz. The VCO is realized as a 4-stage fully differential ring oscillator in 28 nm CMOS HPC+. Its performances have been evaluated by extensive simulations in Cadence environment in terms of power consumption (322.6 μ W), phase noise (-83.78 dBc/Hz @ 1 MHz) and jitter (349.1 fsRMS). The impact of a 1 GRAD Total Ionizing Dose (TID) on the threshold voltage of NMOS and PMOS transistors was replicated by working on transistor models. An electrical simulation was performed, along with a comparison between PVT simulations and this supplementary corner analysis. The results show the robustness of the VCO in response to threshold voltage shifts induced by 1 GRAD TID.
Chiariello, M., La Gala, A., Malanchini, M., Gelmi, L., De Matteis, M. (2024). A 900-MHz Hardening-by-Design Voltage Controlled Oscillator in 28nm CMOS. In 2024 31st IEEE International Conference on Electronics, Circuits and Systems (ICECS) (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/icecs61496.2024.10848918].
A 900-MHz Hardening-by-Design Voltage Controlled Oscillator in 28nm CMOS
Chiariello, Matteo;La Gala, Andrea;Malanchini, Mirco;Gelmi, Luca;De Matteis, Marcello
2024
Abstract
In this paper we present the design and electrical simulations of a Hardening-by-Design current starved Voltage Controlled Oscillator (VCO). This VCO is designed to be a core component of a rad-hard Phase Locked Loop (PLL) functioning as a clock generator with a target output frequency of 900 MHz. The VCO is realized as a 4-stage fully differential ring oscillator in 28 nm CMOS HPC+. Its performances have been evaluated by extensive simulations in Cadence environment in terms of power consumption (322.6 μ W), phase noise (-83.78 dBc/Hz @ 1 MHz) and jitter (349.1 fsRMS). The impact of a 1 GRAD Total Ionizing Dose (TID) on the threshold voltage of NMOS and PMOS transistors was replicated by working on transistor models. An electrical simulation was performed, along with a comparison between PVT simulations and this supplementary corner analysis. The results show the robustness of the VCO in response to threshold voltage shifts induced by 1 GRAD TID.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


