Experimental results on ex-situ doping of ultra-thin silicon-on-insulator (SOI) substrates with device layer thickness (HSOI) ranging from 8 to 30 nm are presented. This work provides fundamental information regarding doping at the nanoscale and demonstrates that proper surface passivation is crucial for controlling the electrical properties of ultra-thin Si films, resulting in a modulation of dopant ionization and carrier mobility in the conductive channel.
Pulici, A., Seguini, G., Fanciulli, M., Perego, M. (2025). Phosphorus Incorporation and Ionization in Ultra-Thin Silicon Films. In 2025 Silicon Nanoelectronics Workshop (SNW) (pp.90-91). Institute of Electrical and Electronics Engineers Inc. [10.23919/snw65111.2025.11097208].
Phosphorus Incorporation and Ionization in Ultra-Thin Silicon Films
Pulici A.;
2025
Abstract
Experimental results on ex-situ doping of ultra-thin silicon-on-insulator (SOI) substrates with device layer thickness (HSOI) ranging from 8 to 30 nm are presented. This work provides fundamental information regarding doping at the nanoscale and demonstrates that proper surface passivation is crucial for controlling the electrical properties of ultra-thin Si films, resulting in a modulation of dopant ionization and carrier mobility in the conductive channel.
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