Bicocca Open Archive

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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
AS - Asia 3.129
NA - Nord America 2.167
EU - Europa 2.024
SA - Sud America 514
AF - Africa 45
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 3
Totale 7.887
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Nazione #
US - Stati Uniti d'America 2.095
SG - Singapore 1.172
HK - Hong Kong 716
CN - Cina 693
RU - Federazione Russa 679
BR - Brasile 427
IE - Irlanda 320
IT - Italia 313
SE - Svezia 266
VN - Vietnam 249
DE - Germania 226
KR - Corea 75
GB - Regno Unito 48
IN - India 47
CA - Canada 43
AR - Argentina 39
ID - Indonesia 29
UA - Ucraina 29
PL - Polonia 25
AT - Austria 24
BD - Bangladesh 24
JP - Giappone 22
NL - Olanda 22
MX - Messico 17
VE - Venezuela 17
IQ - Iraq 16
TR - Turchia 15
ZA - Sudafrica 15
TW - Taiwan 14
EC - Ecuador 13
CH - Svizzera 12
ES - Italia 12
FI - Finlandia 11
PK - Pakistan 11
KE - Kenya 10
FR - Francia 8
SA - Arabia Saudita 8
DZ - Algeria 7
PY - Paraguay 7
BG - Bulgaria 6
LT - Lituania 6
MY - Malesia 6
AU - Australia 5
CO - Colombia 5
MA - Marocco 5
PH - Filippine 5
UZ - Uzbekistan 5
AE - Emirati Arabi Uniti 4
AL - Albania 4
CZ - Repubblica Ceca 4
JM - Giamaica 4
UY - Uruguay 4
AM - Armenia 3
DO - Repubblica Dominicana 3
IR - Iran 3
TN - Tunisia 3
AZ - Azerbaigian 2
CR - Costa Rica 2
EG - Egitto 2
ET - Etiopia 2
EU - Europa 2
NP - Nepal 2
RO - Romania 2
SI - Slovenia 2
BY - Bielorussia 1
CG - Congo 1
CL - Cile 1
CY - Cipro 1
DK - Danimarca 1
GE - Georgia 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
IL - Israele 1
JO - Giordania 1
KZ - Kazakistan 1
LB - Libano 1
LC - Santa Lucia 1
NI - Nicaragua 1
OM - Oman 1
PE - Perù 1
PT - Portogallo 1
SX - ???statistics.table.value.countryCode.SX??? 1
TH - Thailandia 1
Totale 7.887
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Città #
Hong Kong 716
Singapore 664
Dublin 303
New York 221
Ashburn 204
Santa Clara 191
Frankfurt am Main 161
Hefei 152
Beijing 150
Milan 131
Chandler 100
Princeton 100
Ho Chi Minh City 87
Dallas 86
Moscow 76
Los Angeles 75
Seoul 70
Hanoi 56
The Dalles 49
Lawrence 48
Shanghai 42
São Paulo 39
Fairfield 35
Chicago 32
Buffalo 31
Altamura 26
Ann Arbor 25
Ferrara 24
Guangzhou 22
Jakarta 22
Warsaw 21
Nuremberg 20
Tokyo 19
Andover 18
Montreal 18
Rome 18
Brasília 17
Bologna 16
Wilmington 16
Brooklyn 15
San Diego 15
Toronto 15
London 14
Woodbridge 14
Cambridge 13
Rio de Janeiro 13
Seattle 13
Denver 11
Haiphong 11
Orem 11
Houston 10
Lappeenranta 10
Salt Lake City 10
San Giuseppe Vesuviano 10
Vienna 10
Da Nang 9
Kent 9
Munich 9
Nairobi 9
Pune 9
Shenzhen 9
Taipei 9
Belo Horizonte 8
Guarulhos 8
Chennai 7
Falls Church 7
Phoenix 7
San Francisco 7
Xi'an 7
Atlanta 6
Biên Hòa 6
Boston 6
Changsha 6
Curitiba 6
Dhaka 6
Kardzhali 6
Miami 6
Salvador 6
Stockholm 6
Washington 6
Zurich 6
Akola 5
Basra 5
Elk Grove Village 5
Guayaquil 5
Ha Long 5
Hangzhou 5
Johannesburg 5
Lancaster 5
Manchester 5
Ninh Bình 5
Peschiera Borromeo 5
Secaucus 5
Tongchuanshi 5
Viamão 5
Amsterdam 4
Ankara 4
Bắc Giang 4
Council Bluffs 4
Fuzhou 4
Totale 4.572
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Nome #
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 224
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 171
X-Band GaN Power Amplifier for Future Generation SAR Systems 136
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 133
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 125
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 124
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 122
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 121
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 121
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 119
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 118
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 115
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 112
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 111
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 109
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 105
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 104
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 103
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 100
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 100
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 96
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 93
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 90
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 90
Scalability of Multifinger HEMT Performance 88
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 88
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 87
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 86
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 86
Extended operation of class-F power amplifiers using input waveform engineering 86
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 84
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 84
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 82
GaN HEMT model extraction based on dynamic-bias measurements 82
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 81
On the evaluation of the high-frequency load line in active devices 80
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 78
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 78
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 78
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 78
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 77
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 77
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 77
Behavioral Modeling of GaN FETs: a Load-Line Approach 77
Class-A power amplifier design technique based on electron device low-frequency characterization 77
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 76
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 75
Empowering GaN HEMT models: The gateway for power amplifier design 75
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 74
Thermal characterization of high-power GaN HEMTs up to 65 GHz 74
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 73
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 73
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 73
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 72
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 71
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 71
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 71
Nonlinear Embedding and De-embedding: Theory and Applications 70
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 70
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 70
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 69
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 67
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 67
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 67
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 66
Power Amplifier Design Accounting for Input Large-Signal Matching 66
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 65
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 65
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 65
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 64
GaN power amplifier design exploiting wideband large-signal matching 64
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 64
Waveform engineering: State-of-the-art and future trends (invited paper) 64
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 63
A procedure for the extraction of a nonlinear microwave GaN FET model 62
75-VDC GaN technology investigation from a degradation perspective 62
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 61
Linear versus nonlinear de-embedding: Experimental investigation 61
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 61
A new approach to Class-E power amplifier design 61
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 61
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 61
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 60
Current-gain in FETs beyond cut-off frequency 59
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 59
“Hybrid” Approach to Microwave Power Amplifier Design 58
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 58
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 58
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 57
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 57
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 55
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 55
Extremely Low-Frequency Measurements Using an Active Bias Tee 55
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 55
A new description of fast charge-trapping effects in GaN FETs 54
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 53
Microwave FET model identification based on vector intermodulation measurements 52
Evaluation of FET performance and restrictions by low-frequency measurements 50
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 49
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 48
Totale 8.039
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Categoria #
all - tutte 46.225
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 46.225
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20252.995 137 433 94 113 217 40 129 108 264 550 300 610
2025/20262.815 583 497 389 666 571 109 0 0 0 0 0 0
Totale 8.179