Bicocca Open Archive

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VADALÀ, VALERIA
 Distribuzione geografica
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Continente #
AS - Asia 4.806
NA - Nord America 3.618
EU - Europa 2.454
SA - Sud America 687
AF - Africa 114
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 11.689
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Nazione #
US - Stati Uniti d'America 3.331
SG - Singapore 1.760
CN - Cina 787
HK - Hong Kong 765
RU - Federazione Russa 693
VN - Vietnam 560
IT - Italia 529
BR - Brasile 522
IE - Irlanda 322
SE - Svezia 269
DE - Germania 243
CA - Canada 232
BD - Bangladesh 222
IN - India 150
KR - Corea 142
FR - Francia 115
GB - Regno Unito 67
AR - Argentina 64
IQ - Iraq 58
TR - Turchia 50
ID - Indonesia 48
PK - Pakistan 43
UA - Ucraina 37
SA - Arabia Saudita 32
ZA - Sudafrica 31
MX - Messico 30
JP - Giappone 29
VE - Venezuela 29
PH - Filippine 28
PL - Polonia 27
NL - Olanda 26
TW - Taiwan 26
AT - Austria 25
EC - Ecuador 24
CH - Svizzera 22
ES - Italia 20
KE - Kenya 20
MY - Malesia 20
UZ - Uzbekistan 18
MA - Marocco 17
PY - Paraguay 14
CO - Colombia 13
FI - Finlandia 13
AL - Albania 12
CL - Cile 11
DZ - Algeria 11
NP - Nepal 10
JM - Giamaica 9
TN - Tunisia 9
AE - Emirati Arabi Uniti 8
JO - Giordania 8
BG - Bulgaria 7
CR - Costa Rica 7
EG - Egitto 7
ET - Etiopia 7
UY - Uruguay 7
AU - Australia 6
AZ - Azerbaigian 6
LT - Lituania 6
PS - Palestinian Territory 5
CZ - Repubblica Ceca 4
GE - Georgia 4
KZ - Kazakistan 4
LB - Libano 4
OM - Oman 4
AM - Armenia 3
AO - Angola 3
DO - Repubblica Dominicana 3
IR - Iran 3
PT - Portogallo 3
SI - Slovenia 3
TH - Thailandia 3
BY - Bielorussia 2
CG - Congo 2
EU - Europa 2
HN - Honduras 2
NI - Nicaragua 2
PE - Perù 2
RO - Romania 2
RS - Serbia 2
SY - Repubblica araba siriana 2
BE - Belgio 1
BO - Bolivia 1
BT - Bhutan 1
BW - Botswana 1
CI - Costa d'Avorio 1
CY - Cipro 1
DK - Danimarca 1
GR - Grecia 1
HR - Croazia 1
IL - Israele 1
LC - Santa Lucia 1
MK - Macedonia 1
MN - Mongolia 1
MZ - Mozambico 1
PA - Panama 1
SC - Seychelles 1
SN - Senegal 1
SO - Somalia 1
SX - ???statistics.table.value.countryCode.SX??? 1
Totale 11.687
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Città #
Singapore 979
Hong Kong 754
San Jose 614
Dublin 305
Ashburn 304
New York 256
Santa Clara 200
Toronto 187
Ho Chi Minh City 176
Frankfurt am Main 167
Beijing 156
Hefei 152
Milan 144
Hanoi 139
Chicago 138
Seoul 135
The Dalles 125
Los Angeles 109
Chandler 100
Princeton 100
Dallas 95
Lauterbourg 91
Moscow 77
Lawrence 48
São Paulo 48
Shanghai 42
Tukwila 38
Buffalo 37
Fairfield 35
Council Bluffs 33
Rome 31
Ferrara 29
Bologna 28
Da Nang 27
Montreal 27
Altamura 26
Ann Arbor 25
Jakarta 23
Orem 23
Warsaw 23
Baghdad 22
Guangzhou 22
Tokyo 22
Haiphong 21
Nuremberg 21
Nairobi 19
Andover 18
Brasília 18
London 18
Taipei 18
Brooklyn 16
Chennai 16
Lahore 16
San Diego 16
Tashkent 16
Wilmington 16
Zurich 16
Dhaka 15
Houston 15
Naples 14
Pune 14
Seattle 14
Washington 14
Woodbridge 14
Cambridge 13
Rio de Janeiro 13
Riyadh 13
Denver 12
Johannesburg 12
New Delhi 12
Can Tho 11
Mumbai 11
Vienna 11
Biên Hòa 10
Boardman 10
Lappeenranta 10
Salt Lake City 10
San Giuseppe Vesuviano 10
Belo Horizonte 9
Istanbul 9
Jeddah 9
Kent 9
Kuala Lumpur 9
Munich 9
San Francisco 9
Shenzhen 9
Tirana 9
Amman 8
Atlanta 8
Delhi 8
Guarulhos 8
Guayaquil 8
Hải Dương 8
Ninh Bình 8
Xi'an 8
Boston 7
Caracas 7
Changsha 7
Curitiba 7
Elk Grove Village 7
Totale 6.795
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Nome #
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 300
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 207
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 200
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 187
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 180
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 175
X-Band GaN Power Amplifier for Future Generation SAR Systems 173
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 170
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 166
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 164
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 163
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 161
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 160
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 158
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 157
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 155
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 148
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 146
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 144
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 143
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 141
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 140
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 135
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 133
High gain/bandwidth off-chip antenna loaded with metamaterial unit-cell impedance matching circuit for sub-terahertz near-field electronic systems 132
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 128
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 128
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 127
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 121
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 121
Empowering GaN HEMT models: The gateway for power amplifier design 121
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 119
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 119
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 119
Scalability of Multifinger HEMT Performance 116
Behavioral Modeling of GaN FETs: a Load-Line Approach 116
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 115
A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state 115
An innovative two-source large-signal measurement system for the characterization of low-frequency dispersive effects in FETs 113
GaN HEMT model extraction based on dynamic-bias measurements 111
Power Amplifier Design Accounting for Input Large-Signal Matching 108
Extended operation of class-F power amplifiers using input waveform engineering 108
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 108
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 107
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 107
Class-A power amplifier design technique based on electron device low-frequency characterization 107
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 106
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 106
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 105
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 104
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 104
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 103
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 101
Nonlinear Embedding and De-embedding: Theory and Applications 100
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 100
On the evaluation of the high-frequency load line in active devices 100
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 100
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 100
Broadband 3-D shared aperture high isolation nine-element antenna array for on-demand millimeter-wave 5G applications 99
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 99
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 98
Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications 97
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 97
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 96
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 96
Thermal characterization of high-power GaN HEMTs up to 65 GHz 96
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 95
Current-gain in FETs beyond cut-off frequency 94
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 92
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 92
Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches 92
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 91
“Hybrid” Approach to Microwave Power Amplifier Design 91
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 91
GaN power amplifier design exploiting wideband large-signal matching 90
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 89
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 89
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 89
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 88
Waveform engineering: State-of-the-art and future trends (invited paper) 88
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 88
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 87
Linear versus nonlinear de-embedding: Experimental investigation 87
A new approach to Class-E power amplifier design 87
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 86
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 86
A procedure for the extraction of a nonlinear microwave GaN FET model 86
Auto-encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices 85
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 85
Microwave FET model identification based on vector intermodulation measurements 85
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 85
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 85
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 84
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 84
75-VDC GaN technology investigation from a degradation perspective 84
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 78
Extremely Low-Frequency Measurements Using an Active Bias Tee 78
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 78
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 77
A new description of fast charge-trapping effects in GaN FETs 75
Totale 11.520
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Categoria #
all - tutte 55.676
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.676
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022464 0 0 0 0 0 31 161 49 9 8 48 158
2022/2023930 83 275 93 28 55 259 5 50 48 6 15 13
2023/2024975 18 19 7 33 151 279 196 13 143 14 10 92
2024/20252.995 137 433 94 113 217 40 129 108 264 550 300 610
2025/20266.635 583 497 389 666 571 339 1.011 441 724 577 505 332
Totale 11.999