Bicocca Open Archive

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 Distribuzione geografica
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Continente #
NA - Nord America 4.958
EU - Europa 3.154
AS - Asia 2.988
SA - Sud America 445
AF - Africa 73
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 1
Totale 11.635
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Nazione #
US - Stati Uniti d'America 4.854
SG - Singapore 1.120
IT - Italia 942
CN - Cina 767
DE - Germania 622
RU - Federazione Russa 505
HK - Hong Kong 448
BR - Brasile 362
SE - Svezia 277
VN - Vietnam 226
IE - Irlanda 207
FR - Francia 126
GB - Regno Unito 116
JP - Giappone 90
UA - Ucraina 83
ID - Indonesia 73
IN - India 70
CA - Canada 66
ES - Italia 59
FI - Finlandia 53
KR - Corea 51
BD - Bangladesh 31
AR - Argentina 30
DK - Danimarca 29
MX - Messico 29
ZA - Sudafrica 28
PL - Polonia 24
PK - Pakistan 22
BE - Belgio 20
AT - Austria 19
NL - Olanda 19
MA - Marocco 18
IQ - Iraq 16
AU - Australia 14
TW - Taiwan 14
CH - Svizzera 12
CO - Colombia 12
EC - Ecuador 10
TR - Turchia 10
SA - Arabia Saudita 9
VE - Venezuela 9
CL - Cile 6
LT - Lituania 6
NO - Norvegia 6
PY - Paraguay 6
AE - Emirati Arabi Uniti 5
BG - Bulgaria 5
CI - Costa d'Avorio 5
DZ - Algeria 5
PE - Perù 5
GR - Grecia 4
HU - Ungheria 4
KE - Kenya 4
OM - Oman 4
PH - Filippine 4
TN - Tunisia 4
GE - Georgia 3
SI - Slovenia 3
TH - Thailandia 3
UY - Uruguay 3
UZ - Uzbekistan 3
AZ - Azerbaigian 2
CZ - Repubblica Ceca 2
EG - Egitto 2
ET - Etiopia 2
HN - Honduras 2
IL - Israele 2
IR - Iran 2
LK - Sri Lanka 2
NG - Nigeria 2
NP - Nepal 2
PS - Palestinian Territory 2
PT - Portogallo 2
RO - Romania 2
RS - Serbia 2
SC - Seychelles 2
TT - Trinidad e Tobago 2
AL - Albania 1
AM - Armenia 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
EU - Europa 1
GT - Guatemala 1
GY - Guiana 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
MY - Malesia 1
PA - Panama 1
PW - Palau 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TV - Tuvalu 1
Totale 11.635
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Città #
Ann Arbor 1.259
Singapore 632
Frankfurt am Main 481
Hong Kong 439
Ashburn 393
Milan 355
Fairfield 296
Chandler 262
Dublin 192
Wilmington 187
Woodbridge 157
Dearborn 138
Houston 137
Beijing 134
Dallas 134
Seattle 125
Santa Clara 123
New York 122
Cambridge 116
Los Angeles 105
Hefei 95
Princeton 94
Dong Ket 68
Jakarta 61
Jacksonville 55
Ho Chi Minh City 52
Shanghai 52
Buffalo 51
São Paulo 46
Moscow 42
Seoul 41
Miyamae Ku 40
Altamura 39
Lawrence 38
Monza 38
Chicago 37
Nanjing 37
Munich 34
San Diego 30
The Dalles 30
Hanoi 29
Guangzhou 28
Paris 27
Council Bluffs 22
Rome 22
Tianjin 20
Lappeenranta 19
Shenyang 18
Brooklyn 17
Dalmine 17
Hangzhou 17
Stockholm 17
Umeda 17
Andover 16
Como 16
Denver 16
Johannesburg 16
Toronto 16
Vigano San Martino 16
Helsinki 15
Montreal 15
Nuremberg 15
Boston 14
Turin 14
Warsaw 14
Brescia 13
Jinan 13
Chennai 12
Hebei 12
Kent 12
London 12
Naples 12
Querétaro 12
Sacramento 12
Tokyo 12
Berlin 11
Desio 11
Haiphong 11
Pune 11
Boardman 10
Casandrino 10
Dhaka 10
Parma 10
Phoenix 10
Poplar 10
Ribeirão Preto 10
Salt Lake City 10
Taipei 10
Turku 10
Zhengzhou 10
Bergamo 9
Changsha 9
Fremont 9
Manchester 9
Spirano 9
Valladolid 9
Atlanta 8
Cinisello Balsamo 8
Jiaxing 8
Kunming 8
Totale 7.582
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Nome #
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 392
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 392
Stability and universal encapsulation of epitaxial Xenes 388
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 308
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 298
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 277
Tailoring the electronic properties of semiconducting nanocrystal-solids 277
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 267
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 259
Hexagonal Diamond phase of Si and Ge by nanoindentation 256
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 244
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 235
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 234
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 230
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 226
Hexagonal Si and Ge polytypes for silicon photonics 206
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 200
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 196
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 196
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 195
Vibrational Properties of Defective Oxides and 2D Nanolattices 186
Morphological evolution and compositional segregation effects in core-shell nanowires 185
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 184
Structural and chemical stabilization of the epitaxial silicene 182
Vibrational properties of epitaxial silicene layers on (111) Ag 181
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 178
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 176
Theoretical aspects of graphene-like group IV semiconductors 173
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 172
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 171
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 167
Silicene on non-metallic substrates: Recent theoretical and experimental advances 166
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 165
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 160
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 159
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 155
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 155
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 154
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 148
Synthesis of silicene on alternative substrates 146
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 146
New approaches and understandings in the growth of cubic silicon carbide 142
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 140
Predicting 2D silicon allotropes on SnS2 140
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 137
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 136
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 133
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 133
Theoretical study of transition metal dichalcogenides 130
Interaction of silicene and germanene with non-metallic substrates 128
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 127
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 125
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 124
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 122
Interaction of silicene and germanene with non-metallic substrates 120
Unveiling Planar Defects in Hexagonal Group IV Materials 120
First-principles study of strained 2D MoS2 118
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 118
Structural and vibrational properties of amorphous GeO2from first-principles 107
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 107
Electronic properties of hydrogenated silicene and germanene 102
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 102
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 99
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 98
Theoretical study of silicene and germanene 93
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 64
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 60
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 56
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 45
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 41
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 37
Towards Hexagonal Germanium via Nanoindentation 35
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 34
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 34
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 32
Electronic and optical properties of stacking faults in hexagonal germanium. 30
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 25
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 24
Totale 12.203
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Categoria #
all - tutte 42.469
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 42.469
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021818 0 0 0 0 0 102 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20263.133 515 395 480 580 1.031 132 0 0 0 0 0 0
Totale 12.203