Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 7.400
AS - Asia 4.344
EU - Europa 4.037
SA - Sud America 609
Continente sconosciuto - Info sul continente non disponibili 576
AF - Africa 133
OC - Oceania 22
Totale 17.121
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Nazione #
US - Stati Uniti d'America 6.988
SG - Singapore 1.572
IT - Italia 1.474
CN - Cina 890
DE - Germania 653
VN - Vietnam 559
RU - Federazione Russa 513
HK - Hong Kong 480
BR - Brasile 453
CA - Canada 321
SE - Svezia 286
FR - Francia 239
IE - Irlanda 211
GB - Regno Unito 147
IN - India 137
BD - Bangladesh 115
JP - Giappone 106
UA - Ucraina 91
KR - Corea 87
ID - Indonesia 85
ES - Italia 78
FI - Finlandia 73
AR - Argentina 57
NL - Olanda 55
IQ - Iraq 48
MX - Messico 45
PK - Pakistan 41
ZA - Sudafrica 41
TR - Turchia 37
CH - Svizzera 36
DK - Danimarca 29
PL - Polonia 29
MA - Marocco 26
BE - Belgio 25
CO - Colombia 24
SA - Arabia Saudita 24
TW - Taiwan 24
PH - Filippine 23
AT - Austria 22
AU - Australia 20
EC - Ecuador 20
CL - Cile 17
UZ - Uzbekistan 15
MY - Malesia 14
JM - Giamaica 13
KE - Kenya 13
VE - Venezuela 13
HU - Ungheria 11
TH - Thailandia 11
GR - Grecia 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
DZ - Algeria 9
TN - Tunisia 9
ET - Etiopia 8
JO - Giordania 8
NO - Norvegia 8
PY - Paraguay 8
HN - Honduras 7
NP - Nepal 7
OM - Oman 7
TT - Trinidad e Tobago 7
CI - Costa d'Avorio 6
CR - Costa Rica 6
LT - Lituania 6
PS - Palestinian Territory 6
PT - Portogallo 6
RS - Serbia 6
SI - Slovenia 6
UY - Uruguay 6
BG - Bulgaria 5
PE - Perù 5
SC - Seychelles 5
GE - Georgia 4
IL - Israele 4
KZ - Kazakistan 4
LB - Libano 4
SN - Senegal 4
AL - Albania 3
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
CZ - Repubblica Ceca 3
GT - Guatemala 3
GY - Guiana 3
LY - Libia 3
AM - Armenia 2
AO - Angola 2
BB - Barbados 2
EG - Egitto 2
HR - Croazia 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
PA - Panama 2
PR - Porto Rico 2
RO - Romania 2
SY - Repubblica araba siriana 2
BN - Brunei Darussalam 1
Totale 16.531
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Città #
Ann Arbor 1.260
Singapore 874
San Jose 677
Ashburn 555
Milan 531
Frankfurt am Main 494
Hong Kong 462
Fairfield 296
Chandler 262
Toronto 234
Dublin 195
Wilmington 188
New York 169
Council Bluffs 168
Los Angeles 162
Santa Clara 157
Woodbridge 157
Ho Chi Minh City 153
Dallas 151
Beijing 148
Houston 144
Dearborn 138
Seattle 134
Chicago 126
Cambridge 118
Hanoi 114
The Dalles 98
Princeton 96
Hefei 95
Seoul 73
Rome 70
Columbus 69
Dong Ket 68
Buffalo 66
Lauterbourg 66
Jakarta 64
São Paulo 59
Jacksonville 58
Shanghai 58
Moscow 43
Miyamae Ku 40
Monza 40
Altamura 39
Lawrence 38
Nanjing 37
San Diego 35
Munich 34
Sesto San Giovanni 31
Paris 30
Guangzhou 29
Montreal 29
Turin 29
Atlanta 27
Brooklyn 27
Helsinki 27
Haiphong 26
Naples 26
Phoenix 24
Zurich 22
Da Nang 21
Johannesburg 21
Tokyo 21
Denver 20
Lappeenranta 20
Tianjin 20
Boardman 19
Chennai 19
Stockholm 19
London 18
Orem 18
Shenyang 18
Warsaw 18
Brescia 17
Dalmine 17
Hangzhou 17
Newark 17
Umeda 17
Andover 16
Boston 16
Como 16
Nuremberg 16
Sacramento 16
Vigano San Martino 16
Baghdad 15
Philadelphia 15
Tashkent 15
Dhaka 14
Figino 13
Jinan 13
Pune 13
Querétaro 13
Washington 13
Amsterdam 12
Berlin 12
Hebei 12
Kent 12
Manchester 12
Nairobi 12
Salt Lake City 12
Basingstoke 11
Totale 10.292
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Nome #
Stability and universal encapsulation of epitaxial Xenes 463
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 457
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 442
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 387
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 371
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 362
Tailoring the electronic properties of semiconducting nanocrystal-solids 320
Hexagonal Diamond phase of Si and Ge by nanoindentation 319
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 303
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 303
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 300
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 298
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 296
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 296
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 280
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 277
Hexagonal Si and Ge polytypes for silicon photonics 276
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 265
Structural and chemical stabilization of the epitaxial silicene 258
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 250
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 248
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 246
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 244
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 239
Morphological evolution and compositional segregation effects in core-shell nanowires 239
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 236
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 236
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 236
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 235
Vibrational Properties of Defective Oxides and 2D Nanolattices 234
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 232
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 229
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 221
Theoretical aspects of graphene-like group IV semiconductors 219
Vibrational properties of epitaxial silicene layers on (111) Ag 217
Silicene on non-metallic substrates: Recent theoretical and experimental advances 217
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 214
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 214
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 213
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 211
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 208
New approaches and understandings in the growth of cubic silicon carbide 207
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 202
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 185
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 185
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 178
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 176
Predicting 2D silicon allotropes on SnS2 174
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 173
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 173
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 170
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 169
Synthesis of silicene on alternative substrates 165
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 164
First-principles study of strained 2D MoS2 163
Theoretical study of transition metal dichalcogenides 163
Unveiling Planar Defects in Hexagonal Group IV Materials 162
Interaction of silicene and germanene with non-metallic substrates 161
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 155
Interaction of silicene and germanene with non-metallic substrates 153
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 151
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 150
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 148
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 147
Electronic and optical properties of stacking faults in hexagonal germanium. 145
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 142
Electronic properties of hydrogenated silicene and germanene 142
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 138
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 138
Structural and vibrational properties of amorphous GeO2from first-principles 136
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 135
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 134
Theoretical study of silicene and germanene 128
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 124
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 113
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 113
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 111
Towards Hexagonal Germanium via Nanoindentation 109
Nanoindentation-Driven Formation of Textured Hexagonal Silicon Crystals 91
Hexotic and Metastable Phases in Group-IV Semiconductors: From Nanoindentation to Epitaxial Growth and Defect-Induced Magnetism 37
Totale 17.121
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Categoria #
all - tutte 56.130
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.130
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022980 0 0 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20267.043 515 395 480 580 1.031 382 1.007 324 683 532 468 646
2026/20271.008 292 415 301 0 0 0 0 0 0 0 0 0
Totale 17.121