ALBANI, MARCO GIOCONDO
 Distribuzione geografica
Continente #
NA - Nord America 5.158
EU - Europa 2.602
AS - Asia 2.486
Continente sconosciuto - Info sul continente non disponibili 403
SA - Sud America 395
AF - Africa 74
OC - Oceania 6
Totale 11.124
Nazione #
US - Stati Uniti d'America 4.898
SG - Singapore 865
IT - Italia 704
CN - Cina 536
DE - Germania 522
VN - Vietnam 327
HK - Hong Kong 312
RU - Federazione Russa 300
BR - Brasile 294
SE - Svezia 256
CA - Canada 225
IE - Irlanda 176
GB - Regno Unito 118
FR - Francia 113
AT - Austria 99
IN - India 93
UA - Ucraina 64
ID - Indonesia 61
BD - Bangladesh 51
FI - Finlandia 46
AR - Argentina 45
DK - Danimarca 41
TR - Turchia 39
CH - Svizzera 36
KR - Corea 36
ES - Italia 33
NL - Olanda 26
JP - Giappone 25
IQ - Iraq 24
ZA - Sudafrica 22
PK - Pakistan 21
PH - Filippine 14
BE - Belgio 13
EC - Ecuador 13
SA - Arabia Saudita 13
VE - Venezuela 13
MX - Messico 12
CO - Colombia 10
PL - Polonia 10
SC - Seychelles 10
AL - Albania 9
TH - Thailandia 8
LT - Lituania 7
MA - Marocco 7
MY - Malesia 6
AE - Emirati Arabi Uniti 5
AZ - Azerbaigian 5
CL - Cile 5
EU - Europa 5
GR - Grecia 5
IR - Iran 5
PY - Paraguay 5
TN - Tunisia 5
TT - Trinidad e Tobago 5
AU - Australia 4
CZ - Repubblica Ceca 4
ET - Etiopia 4
JM - Giamaica 4
JO - Giordania 4
KE - Kenya 4
NP - Nepal 4
RO - Romania 4
UY - Uruguay 4
UZ - Uzbekistan 4
BB - Barbados 3
BG - Bulgaria 3
BO - Bolivia 3
CI - Costa d'Avorio 3
CR - Costa Rica 3
GE - Georgia 3
LB - Libano 3
PE - Perù 3
SN - Senegal 3
TW - Taiwan 3
ZW - Zimbabwe 3
BY - Bielorussia 2
DZ - Algeria 2
EE - Estonia 2
EG - Egitto 2
GA - Gabon 2
HU - Ungheria 2
IL - Israele 2
KG - Kirghizistan 2
KH - Cambogia 2
KW - Kuwait 2
KZ - Kazakistan 2
NI - Nicaragua 2
OM - Oman 2
YE - Yemen 2
AM - Armenia 1
AO - Angola 1
BH - Bahrain 1
BZ - Belize 1
CW - ???statistics.table.value.countryCode.CW??? 1
GH - Ghana 1
GT - Guatemala 1
GW - Guinea-Bissau 1
HN - Honduras 1
IS - Islanda 1
LA - Repubblica Popolare Democratica del Laos 1
Totale 10.710
Città #
Ann Arbor 1.185
Singapore 509
San Jose 360
Frankfurt am Main 351
Ashburn 329
Milan 323
Hong Kong 294
Chandler 213
Fairfield 201
Wilmington 167
Dublin 166
Toronto 164
Houston 133
Council Bluffs 124
Santa Clara 123
Woodbridge 108
New York 95
Beijing 92
Dearborn 90
Vienna 87
Seattle 84
Princeton 83
Ho Chi Minh City 76
Dong Ket 73
Cambridge 71
Los Angeles 67
Chicago 63
Jacksonville 63
Nanjing 62
The Dalles 59
Jakarta 52
Dresden 49
Hanoi 49
Lauterbourg 42
Rome 42
Dallas 40
Buffalo 31
Shanghai 31
Altamura 27
Seoul 26
São Paulo 25
Lausanne 24
Columbus 22
Moscow 21
Lawrence 20
Basingstoke 19
Boardman 19
Hangzhou 18
Helsinki 18
Nanchang 16
Guangzhou 15
Phoenix 15
Saclay 14
San Diego 14
Brooklyn 13
Lahore 13
London 13
Montreal 12
Ottawa 12
Sacramento 12
Tokyo 12
Brussels 11
Orem 11
Pune 11
Rio de Janeiro 11
Brasília 10
Changsha 10
Marburg 10
Norwalk 10
Shenyang 10
Tianjin 10
Turin 10
Chatou 9
Chennai 9
Da Nang 9
Düsseldorf 9
Haiphong 9
Mumbai 9
Ningbo 9
Dhaka 8
Hefei 8
Kunming 8
Turku 8
Washington 8
Baghdad 7
Belo Horizonte 7
Charlotte 7
Eindhoven 7
Figino 7
Grafing 7
Jinan 7
Lachine 7
Warsaw 7
Amsterdam 6
Andover 6
Ardea 6
Atlanta 6
Bangkok 6
Bologna 6
Chittagong 6
Totale 6.873
Nome #
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 481
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 471
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 451
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 443
Modeling of 3D heteroepitaxial structures by continuum approaches 434
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 347
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 344
Strain engineering in Ge/GeSn core/shell nanowires 309
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 307
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 294
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 277
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 277
Dynamics of pit filling in heteroepitaxy via phase-field simulations 273
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 270
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 269
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 266
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 264
Continuum modeling of heteroepitaxial growth in semiconductors 263
Modelling the kinetic growth mode of GaAs nanomembranes 262
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 260
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 255
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 252
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 252
Morphological evolution and compositional segregation effects in core-shell nanowires 252
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 247
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 240
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 237
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 234
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 229
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 223
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 219
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 217
Modeling semiconductor heteroepitaxy: a continuum approach 212
Strain and strain-driven effects in coaxial nanowires 208
Strain relaxation in semiconductor core/shell nanowires 200
Dynamics of pit filling in heteroepitaxy via phase-field simulations 194
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 192
Stress engineering of boron doped diamond thin films via micro-fabrication 185
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 184
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 175
Continuum model of out-of-equilibrium crystal growth: theory and experiments 155
Totale 11.124
Categoria #
all - tutte 35.297
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.297


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022759 0 0 0 137 83 60 56 61 51 94 84 133
2022/20231.083 124 244 132 125 92 169 6 48 67 21 24 31
2023/2024567 26 37 22 15 94 138 101 16 34 5 19 60
2024/20251.471 77 235 99 58 113 101 98 85 113 222 86 184
2025/20263.201 285 178 282 180 325 166 570 181 282 252 228 272
2026/2027719 97 127 350 145 0 0 0 0 0 0 0 0
Totale 11.124