ALBANI, MARCO GIOCONDO
 Distribuzione geografica
Continente #
NA - Nord America 4.409
AS - Asia 2.462
EU - Europa 2.389
SA - Sud America 380
AF - Africa 73
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 5
Totale 9.724
Nazione #
US - Stati Uniti d'America 4.180
SG - Singapore 860
CN - Cina 535
DE - Germania 522
IT - Italia 510
VN - Vietnam 323
HK - Hong Kong 307
RU - Federazione Russa 300
BR - Brasile 288
SE - Svezia 256
CA - Canada 207
IE - Irlanda 176
FR - Francia 112
GB - Regno Unito 112
AT - Austria 98
IN - India 93
UA - Ucraina 63
ID - Indonesia 61
BD - Bangladesh 49
FI - Finlandia 46
DK - Danimarca 41
AR - Argentina 40
TR - Turchia 39
CH - Svizzera 36
KR - Corea 36
ES - Italia 29
NL - Olanda 25
IQ - Iraq 24
JP - Giappone 24
ZA - Sudafrica 22
PK - Pakistan 21
BE - Belgio 13
PH - Filippine 13
EC - Ecuador 12
MX - Messico 12
SA - Arabia Saudita 12
VE - Venezuela 11
CO - Colombia 10
SC - Seychelles 10
AL - Albania 9
TH - Thailandia 8
LT - Lituania 7
MA - Marocco 7
PL - Polonia 7
AZ - Azerbaigian 5
EU - Europa 5
GR - Grecia 5
IR - Iran 5
MY - Malesia 5
PY - Paraguay 5
TN - Tunisia 5
AU - Australia 4
CL - Cile 4
CZ - Repubblica Ceca 4
ET - Etiopia 4
JO - Giordania 4
KE - Kenya 4
RO - Romania 4
UY - Uruguay 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
BG - Bulgaria 3
BO - Bolivia 3
CI - Costa d'Avorio 3
GE - Georgia 3
LB - Libano 3
NP - Nepal 3
PE - Perù 3
SN - Senegal 3
TW - Taiwan 3
ZW - Zimbabwe 3
BY - Bielorussia 2
CR - Costa Rica 2
DZ - Algeria 2
EG - Egitto 2
GA - Gabon 2
HU - Ungheria 2
IL - Israele 2
JM - Giamaica 2
KG - Kirghizistan 2
KH - Cambogia 2
KW - Kuwait 2
KZ - Kazakistan 2
OM - Oman 2
TT - Trinidad e Tobago 2
YE - Yemen 2
AM - Armenia 1
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BZ - Belize 1
GH - Ghana 1
GW - Guinea-Bissau 1
HN - Honduras 1
IS - Islanda 1
LA - Repubblica Popolare Democratica del Laos 1
LR - Liberia 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
Totale 9.714
Città #
Ann Arbor 1.185
Singapore 507
Frankfurt am Main 351
Hong Kong 289
San Jose 273
Milan 240
Ashburn 223
Chandler 213
Fairfield 201
Dublin 166
Wilmington 166
Toronto 158
Houston 130
Santa Clara 112
Woodbridge 108
Beijing 92
Dearborn 90
New York 90
Vienna 87
Princeton 81
Seattle 79
Ho Chi Minh City 74
Dong Ket 73
Cambridge 71
Nanjing 62
Jacksonville 60
Chicago 59
The Dalles 59
Council Bluffs 58
Los Angeles 57
Jakarta 52
Dresden 49
Hanoi 48
Lauterbourg 42
Dallas 37
Shanghai 30
Buffalo 28
Altamura 27
Seoul 26
Lausanne 24
São Paulo 23
Moscow 21
Basingstoke 19
Lawrence 19
Boardman 18
Hangzhou 18
Helsinki 18
Nanchang 16
Guangzhou 15
Saclay 14
San Diego 14
Columbus 13
Lahore 13
London 13
Ottawa 12
Rome 12
Sacramento 12
Tokyo 12
Brussels 11
Orem 11
Pune 11
Rio de Janeiro 11
Brooklyn 10
Changsha 10
Marburg 10
Phoenix 10
Shenyang 10
Tianjin 10
Chatou 9
Chennai 9
Da Nang 9
Düsseldorf 9
Haiphong 9
Montreal 9
Mumbai 9
Ningbo 9
Norwalk 9
Brasília 8
Dhaka 8
Hefei 8
Kunming 8
Turin 8
Turku 8
Baghdad 7
Belo Horizonte 7
Eindhoven 7
Grafing 7
Jinan 7
Lachine 7
Amsterdam 6
Andover 6
Ardea 6
Bangkok 6
Chittagong 6
Istanbul 6
Jiaxing 6
Johannesburg 6
Lanzhou 6
Redondo Beach 6
Riyadh 6
Totale 6.400
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 450
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 442
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 426
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 416
Modeling of 3D heteroepitaxial structures by continuum approaches 368
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 322
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 322
Strain engineering in Ge/GeSn core/shell nanowires 287
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 282
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 268
Dynamics of pit filling in heteroepitaxy via phase-field simulations 250
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 249
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 247
Modelling the kinetic growth mode of GaAs nanomembranes 243
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 241
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 241
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 240
Continuum modeling of heteroepitaxial growth in semiconductors 240
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 237
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 236
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 236
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 232
Morphological evolution and compositional segregation effects in core-shell nanowires 223
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 222
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 220
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 214
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 209
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 207
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 203
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 201
Strain and strain-driven effects in coaxial nanowires 198
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 197
Modeling semiconductor heteroepitaxy: a continuum approach 196
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 189
Strain relaxation in semiconductor core/shell nanowires 186
Dynamics of pit filling in heteroepitaxy via phase-field simulations 184
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 173
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 171
Stress engineering of boron doped diamond thin films via micro-fabrication 161
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 154
Continuum model of out-of-equilibrium crystal growth: theory and experiments 138
Totale 10.121
Categoria #
all - tutte 31.526
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 31.526


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021280 0 0 0 0 0 0 0 0 0 0 90 190
2021/20221.125 113 98 155 137 83 60 56 61 51 94 84 133
2022/20231.083 124 244 132 125 92 169 6 48 67 21 24 31
2023/2024567 26 37 22 15 94 138 101 16 34 5 19 60
2024/20251.471 77 235 99 58 113 101 98 85 113 222 86 184
2025/20262.917 285 178 282 180 325 166 570 181 282 252 216 0
Totale 10.121