ALBANI, MARCO GIOCONDO
 Distribuzione geografica
Continente #
NA - Nord America 4.465
AS - Asia 2.462
EU - Europa 2.428
SA - Sud America 380
AF - Africa 73
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 5
Totale 9.819
Nazione #
US - Stati Uniti d'America 4.232
SG - Singapore 860
IT - Italia 547
CN - Cina 535
DE - Germania 522
VN - Vietnam 323
HK - Hong Kong 307
RU - Federazione Russa 300
BR - Brasile 288
SE - Svezia 256
CA - Canada 211
IE - Irlanda 176
FR - Francia 113
GB - Regno Unito 112
AT - Austria 98
IN - India 93
UA - Ucraina 63
ID - Indonesia 61
BD - Bangladesh 49
FI - Finlandia 46
DK - Danimarca 41
AR - Argentina 40
TR - Turchia 39
CH - Svizzera 36
KR - Corea 36
ES - Italia 29
NL - Olanda 26
IQ - Iraq 24
JP - Giappone 24
ZA - Sudafrica 22
PK - Pakistan 21
BE - Belgio 13
PH - Filippine 13
EC - Ecuador 12
MX - Messico 12
SA - Arabia Saudita 12
VE - Venezuela 11
CO - Colombia 10
SC - Seychelles 10
AL - Albania 9
TH - Thailandia 8
LT - Lituania 7
MA - Marocco 7
PL - Polonia 7
AZ - Azerbaigian 5
EU - Europa 5
GR - Grecia 5
IR - Iran 5
MY - Malesia 5
PY - Paraguay 5
TN - Tunisia 5
AU - Australia 4
CL - Cile 4
CZ - Repubblica Ceca 4
ET - Etiopia 4
JO - Giordania 4
KE - Kenya 4
RO - Romania 4
UY - Uruguay 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
BG - Bulgaria 3
BO - Bolivia 3
CI - Costa d'Avorio 3
GE - Georgia 3
LB - Libano 3
NP - Nepal 3
PE - Perù 3
SN - Senegal 3
TW - Taiwan 3
ZW - Zimbabwe 3
BY - Bielorussia 2
CR - Costa Rica 2
DZ - Algeria 2
EG - Egitto 2
GA - Gabon 2
HU - Ungheria 2
IL - Israele 2
JM - Giamaica 2
KG - Kirghizistan 2
KH - Cambogia 2
KW - Kuwait 2
KZ - Kazakistan 2
OM - Oman 2
TT - Trinidad e Tobago 2
YE - Yemen 2
AM - Armenia 1
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BZ - Belize 1
GH - Ghana 1
GW - Guinea-Bissau 1
HN - Honduras 1
IS - Islanda 1
LA - Repubblica Popolare Democratica del Laos 1
LR - Liberia 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
Totale 9.809
Città #
Ann Arbor 1.185
Singapore 507
Frankfurt am Main 351
San Jose 314
Hong Kong 289
Milan 240
Ashburn 223
Chandler 213
Fairfield 201
Dublin 166
Wilmington 166
Toronto 161
Houston 130
Santa Clara 112
Woodbridge 108
Beijing 92
New York 91
Dearborn 90
Vienna 87
Princeton 81
Seattle 79
Ho Chi Minh City 74
Dong Ket 73
Cambridge 71
Nanjing 62
Jacksonville 60
Chicago 59
The Dalles 59
Council Bluffs 58
Los Angeles 58
Jakarta 52
Dresden 49
Hanoi 48
Lauterbourg 42
Dallas 38
Shanghai 30
Buffalo 28
Altamura 27
Seoul 26
Lausanne 24
São Paulo 23
Moscow 21
Basingstoke 19
Boardman 19
Lawrence 19
Hangzhou 18
Helsinki 18
Nanchang 16
Guangzhou 15
Saclay 14
San Diego 14
Columbus 13
Lahore 13
London 13
Ottawa 12
Rome 12
Sacramento 12
Tokyo 12
Brussels 11
Orem 11
Pune 11
Rio de Janeiro 11
Brooklyn 10
Changsha 10
Marburg 10
Montreal 10
Phoenix 10
Shenyang 10
Tianjin 10
Chatou 9
Chennai 9
Da Nang 9
Düsseldorf 9
Haiphong 9
Mumbai 9
Ningbo 9
Norwalk 9
Brasília 8
Dhaka 8
Hefei 8
Kunming 8
Turin 8
Turku 8
Baghdad 7
Belo Horizonte 7
Eindhoven 7
Grafing 7
Jinan 7
Lachine 7
Amsterdam 6
Andover 6
Ardea 6
Bangkok 6
Chittagong 6
Istanbul 6
Jiaxing 6
Johannesburg 6
Lanzhou 6
Redondo Beach 6
Riyadh 6
Totale 6.449
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 452
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 444
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 428
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 418
Modeling of 3D heteroepitaxial structures by continuum approaches 372
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 325
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 324
Strain engineering in Ge/GeSn core/shell nanowires 289
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 284
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 270
Dynamics of pit filling in heteroepitaxy via phase-field simulations 252
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 251
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 251
Modelling the kinetic growth mode of GaAs nanomembranes 245
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 243
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 243
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 243
Continuum modeling of heteroepitaxial growth in semiconductors 242
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 240
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 239
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 238
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 236
Morphological evolution and compositional segregation effects in core-shell nanowires 226
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 225
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 221
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 216
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 211
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 210
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 205
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 203
Strain and strain-driven effects in coaxial nanowires 200
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 200
Modeling semiconductor heteroepitaxy: a continuum approach 197
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 194
Strain relaxation in semiconductor core/shell nanowires 187
Dynamics of pit filling in heteroepitaxy via phase-field simulations 186
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 174
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 173
Stress engineering of boron doped diamond thin films via micro-fabrication 163
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 156
Continuum model of out-of-equilibrium crystal growth: theory and experiments 140
Totale 10.216
Categoria #
all - tutte 32.067
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.067


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021190 0 0 0 0 0 0 0 0 0 0 0 190
2021/20221.125 113 98 155 137 83 60 56 61 51 94 84 133
2022/20231.083 124 244 132 125 92 169 6 48 67 21 24 31
2023/2024567 26 37 22 15 94 138 101 16 34 5 19 60
2024/20251.471 77 235 99 58 113 101 98 85 113 222 86 184
2025/20263.012 285 178 282 180 325 166 570 181 282 252 228 83
Totale 10.216