SALVALAGLIO, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 4.772
AS - Asia 2.097
EU - Europa 1.953
SA - Sud America 284
Continente sconosciuto - Info sul continente non disponibili 185
AF - Africa 56
OC - Oceania 3
Totale 9.350
Nazione #
US - Stati Uniti d'America 4.513
SG - Singapore 730
CN - Cina 479
IT - Italia 427
DE - Germania 355
VN - Vietnam 286
RU - Federazione Russa 266
HK - Hong Kong 265
CA - Canada 223
BR - Brasile 203
SE - Svezia 187
IE - Irlanda 155
GB - Regno Unito 149
UA - Ucraina 125
FR - Francia 73
IN - India 69
FI - Finlandia 61
TR - Turchia 50
BD - Bangladesh 42
AT - Austria 39
AR - Argentina 31
IQ - Iraq 27
KR - Corea 24
ES - Italia 22
DK - Danimarca 21
SA - Arabia Saudita 20
ID - Indonesia 17
MX - Messico 16
NL - Olanda 15
ZA - Sudafrica 15
CO - Colombia 13
JP - Giappone 13
PK - Pakistan 12
BE - Belgio 11
EC - Ecuador 11
UZ - Uzbekistan 11
MA - Marocco 10
CL - Cile 9
PH - Filippine 8
CH - Svizzera 7
NP - Nepal 7
VE - Venezuela 7
LT - Lituania 6
AL - Albania 5
CR - Costa Rica 5
MY - Malesia 5
TH - Thailandia 5
TN - Tunisia 5
TW - Taiwan 5
AZ - Azerbaigian 4
KE - Kenya 4
PL - Polonia 4
RO - Romania 4
BY - Bielorussia 3
CI - Costa d'Avorio 3
ET - Etiopia 3
JM - Giamaica 3
JO - Giordania 3
KZ - Kazakistan 3
NI - Nicaragua 3
PY - Paraguay 3
SC - Seychelles 3
UY - Uruguay 3
AU - Australia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
GR - Grecia 2
HN - Honduras 2
KG - Kirghizistan 2
LY - Libia 2
MC - Monaco 2
MD - Moldavia 2
PE - Perù 2
PT - Portogallo 2
SV - El Salvador 2
TT - Trinidad e Tobago 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
BG - Bulgaria 1
BO - Bolivia 1
BT - Bhutan 1
BZ - Belize 1
DJ - Gibuti 1
DO - Repubblica Dominicana 1
EE - Estonia 1
EG - Egitto 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GH - Ghana 1
GT - Guatemala 1
GY - Guiana 1
HR - Croazia 1
IL - Israele 1
IR - Iran 1
IS - Islanda 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LU - Lussemburgo 1
Totale 9.156
Città #
Ashburn 487
Singapore 421
Woodbridge 331
San Jose 313
Ann Arbor 293
Fairfield 280
Hong Kong 254
Chandler 227
Houston 202
Milan 178
Frankfurt am Main 166
Jacksonville 155
Toronto 154
Dublin 149
Santa Clara 127
New York 117
Wilmington 116
Council Bluffs 112
Seattle 112
Dearborn 94
Cambridge 79
Beijing 75
Princeton 72
Dong Ket 68
Ho Chi Minh City 68
Los Angeles 65
The Dalles 61
Dallas 59
Nanjing 57
Chicago 53
Dresden 50
Hanoi 44
Southend 43
Shanghai 36
Rome 34
Vienna 31
Lauterbourg 30
Buffalo 29
Altamura 27
Lachine 26
Lawrence 24
Helsinki 22
Moscow 22
São Paulo 21
Washington 19
Phoenix 17
Jiaxing 16
Nanchang 16
Cagliari 14
San Diego 14
Shenyang 14
Atlanta 13
Seoul 13
Berlin 12
Boardman 12
Jinan 12
London 12
Columbus 11
Norwalk 11
Turin 11
Baghdad 10
Changsha 10
Guangzhou 10
Hefei 10
Kunming 10
Montreal 10
Orem 10
Redondo Beach 10
Andover 9
Jakarta 9
Tashkent 9
Tianjin 9
Tokyo 9
Bozeman 8
Brussels 8
Charlotte 8
Falls Church 8
Hangzhou 8
Hebei 8
Ottawa 8
Boston 7
Da Nang 7
Dhaka 7
Düsseldorf 7
Karlsruhe 7
Miami 7
Munich 7
New Delhi 7
Pune 7
Riyadh 7
Sacramento 7
Basingstoke 6
Brooklyn 6
Haiphong 6
Hwaseong-si 6
Jeddah 6
Las Cruces 6
Mountain View 6
Naples 6
Ningbo 6
Totale 5.913
Nome #
Dislocation-free SiGe/Si heterostructures 377
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 365
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 346
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 340
Continuum modeling of vertical heterostructures: elastic properties and morphological evolution 334
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 334
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 320
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 318
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 302
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 292
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 287
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 284
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 266
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 266
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 266
Continuum modeling of heteroepitaxial growth in semiconductors 263
Ge Crystals on Si Show Their Light 254
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 254
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 252
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale 247
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 247
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 237
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 235
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 229
Fully coherent growth of Ge on free-standing Si(001) nanomesas 227
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 223
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 219
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 218
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 214
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 211
Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction 211
Strain relaxation of GaAs/Ge crystals on patterned Si substrates 205
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 203
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 195
Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking 161
From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures 148
Totale 9.350
Categoria #
all - tutte 30.649
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.649


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022273 0 0 0 42 21 29 21 22 16 43 19 60
2022/2023804 76 248 91 90 47 124 2 45 56 2 13 10
2023/2024530 19 23 16 18 72 166 90 19 36 5 12 54
2024/20251.114 63 130 59 46 91 70 22 79 101 185 78 190
2025/20262.921 327 166 217 200 328 144 411 121 255 263 208 281
2026/2027814 111 124 381 198 0 0 0 0 0 0 0 0
Totale 9.350