SALVALAGLIO, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 3.903
AS - Asia 2.062
EU - Europa 1.762
SA - Sud America 274
AF - Africa 55
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.060
Nazione #
US - Stati Uniti d'America 3.669
SG - Singapore 728
CN - Cina 474
DE - Germania 351
VN - Vietnam 273
RU - Federazione Russa 266
HK - Hong Kong 264
IT - Italia 262
CA - Canada 210
BR - Brasile 197
SE - Svezia 187
IE - Irlanda 154
GB - Regno Unito 139
UA - Ucraina 124
FR - Francia 73
IN - India 69
FI - Finlandia 61
TR - Turchia 49
AT - Austria 39
BD - Bangladesh 32
AR - Argentina 31
IQ - Iraq 27
KR - Corea 23
ES - Italia 22
DK - Danimarca 20
SA - Arabia Saudita 19
ID - Indonesia 17
ZA - Sudafrica 15
MX - Messico 14
JP - Giappone 13
PK - Pakistan 12
BE - Belgio 11
CO - Colombia 11
EC - Ecuador 11
UZ - Uzbekistan 11
MA - Marocco 10
NL - Olanda 10
CH - Svizzera 7
CL - Cile 7
NP - Nepal 7
PH - Filippine 7
VE - Venezuela 7
LT - Lituania 6
AL - Albania 5
MY - Malesia 5
TH - Thailandia 5
TN - Tunisia 5
TW - Taiwan 5
AZ - Azerbaigian 4
PL - Polonia 4
RO - Romania 4
BY - Bielorussia 3
CI - Costa d'Avorio 3
ET - Etiopia 3
JO - Giordania 3
KE - Kenya 3
KZ - Kazakistan 3
PY - Paraguay 3
SC - Seychelles 3
UY - Uruguay 3
AU - Australia 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
GR - Grecia 2
KG - Kirghizistan 2
LY - Libia 2
MD - Moldavia 2
PE - Perù 2
SV - El Salvador 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
BG - Bulgaria 1
BO - Bolivia 1
BT - Bhutan 1
BZ - Belize 1
DJ - Gibuti 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GH - Ghana 1
GY - Guiana 1
HN - Honduras 1
HR - Croazia 1
IL - Israele 1
IR - Iran 1
IS - Islanda 1
JM - Giamaica 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LU - Lussemburgo 1
ME - Montenegro 1
MG - Madagascar 1
NG - Nigeria 1
NI - Nicaragua 1
OM - Oman 1
PT - Portogallo 1
Totale 8.053
Città #
Singapore 419
Woodbridge 331
Ashburn 310
Ann Arbor 293
Fairfield 280
Hong Kong 254
Chandler 226
Houston 202
San Jose 199
Frankfurt am Main 166
Jacksonville 154
Toronto 153
Dublin 149
New York 115
Wilmington 115
Santa Clara 112
Milan 110
Seattle 106
Dearborn 94
Cambridge 79
Beijing 75
Princeton 72
Dong Ket 68
Ho Chi Minh City 67
Los Angeles 61
The Dalles 61
Nanjing 57
Dallas 54
Council Bluffs 52
Chicago 51
Dresden 46
Southend 43
Hanoi 36
Shanghai 35
Vienna 31
Lauterbourg 30
Buffalo 28
Altamura 27
Lachine 26
Lawrence 24
Helsinki 22
Moscow 22
São Paulo 20
Jiaxing 16
Nanchang 16
Shenyang 14
Cagliari 13
San Diego 13
Seoul 13
Washington 13
Berlin 12
Boardman 12
Jinan 12
Baghdad 10
Changsha 10
Guangzhou 10
Hefei 10
Kunming 10
London 10
Redondo Beach 10
Andover 9
Jakarta 9
Norwalk 9
Orem 9
Tashkent 9
Tianjin 9
Tokyo 9
Atlanta 8
Brussels 8
Falls Church 8
Hangzhou 8
Hebei 8
Ottawa 8
Da Nang 7
Dhaka 7
Düsseldorf 7
Karlsruhe 7
Montreal 7
Munich 7
New Delhi 7
Phoenix 7
Pune 7
Riyadh 7
Rome 7
Basingstoke 6
Haiphong 6
Hwaseong-si 6
Jeddah 6
Mountain View 6
Ningbo 6
Boston 5
Charlotte 5
Curitiba 5
Dammam 5
Hải Dương 5
Kanpur 5
Lahore 5
Manchester 5
Redmond 5
Rio de Janeiro 5
Totale 5.353
Nome #
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 323
Dislocation-free SiGe/Si heterostructures 323
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 321
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 309
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 302
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 289
Continuum modeling of vertical heterostructures: elastic properties and morphological evolution 278
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 273
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 270
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 263
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 261
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 245
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 244
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 240
Continuum modeling of heteroepitaxial growth in semiconductors 240
Ge Crystals on Si Show Their Light 229
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 222
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale 221
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 220
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 217
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 214
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 212
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 209
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 206
Fully coherent growth of Ge on free-standing Si(001) nanomesas 205
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 203
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 200
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 193
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 189
Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction 180
Strain relaxation of GaAs/Ge crystals on patterned Si substrates 178
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 177
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 171
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 168
Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking 126
From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures 123
Totale 8.244
Categoria #
all - tutte 26.971
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.971


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021131 0 0 0 0 0 0 0 0 0 0 36 95
2021/2022350 24 26 27 42 21 29 21 22 16 43 19 60
2022/2023804 76 248 91 90 47 124 2 45 56 2 13 10
2023/2024530 19 23 16 18 72 166 90 19 36 5 12 54
2024/20251.114 63 130 59 46 91 70 22 79 101 185 78 190
2025/20262.629 327 166 217 200 328 144 411 121 255 263 197 0
Totale 8.244