Bicocca Open Archive

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GUZZI, MARIO
 Distribuzione geografica
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Continente #
NA - Nord America 13.753
AS - Asia 5.541
EU - Europa 4.795
SA - Sud America 665
Continente sconosciuto - Info sul continente non disponibili 175
AF - Africa 114
OC - Oceania 6
Totale 25.049
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Nazione #
US - Stati Uniti d'America 12.962
SG - Singapore 2.087
CN - Cina 1.313
SE - Svezia 782
IT - Italia 720
CA - Canada 707
DE - Germania 690
HK - Hong Kong 633
RU - Federazione Russa 594
VN - Vietnam 585
UA - Ucraina 566
IE - Irlanda 557
BR - Brasile 485
GB - Regno Unito 310
IN - India 211
FR - Francia 182
FI - Finlandia 143
KR - Corea 133
BD - Bangladesh 96
IQ - Iraq 73
NL - Olanda 66
AR - Argentina 60
PK - Pakistan 56
TR - Turchia 48
JP - Giappone 46
AT - Austria 45
MX - Messico 38
SA - Arabia Saudita 37
PH - Filippine 35
EC - Ecuador 30
MA - Marocco 30
ID - Indonesia 28
UZ - Uzbekistan 28
BE - Belgio 26
PL - Polonia 25
CO - Colombia 22
ZA - Sudafrica 22
VE - Venezuela 20
CL - Cile 17
ES - Italia 16
KE - Kenya 16
DK - Danimarca 15
MY - Malesia 15
IR - Iran 13
NP - Nepal 13
AE - Emirati Arabi Uniti 12
CR - Costa Rica 11
PY - Paraguay 11
JM - Giamaica 10
JO - Giordania 10
IL - Israele 9
TN - Tunisia 9
DZ - Algeria 8
EG - Egitto 8
TH - Thailandia 8
UY - Uruguay 8
RO - Romania 7
TW - Taiwan 7
AZ - Azerbaigian 6
BO - Bolivia 6
CH - Svizzera 6
CZ - Repubblica Ceca 6
LB - Libano 6
PS - Palestinian Territory 6
RS - Serbia 6
HU - Ungheria 5
KZ - Kazakistan 5
LT - Lituania 5
PA - Panama 5
AU - Australia 4
HN - Honduras 4
MM - Myanmar 4
NI - Nicaragua 4
OM - Oman 4
PE - Perù 4
SN - Senegal 4
AL - Albania 3
BG - Bulgaria 3
ET - Etiopia 3
GR - Grecia 3
HR - Croazia 3
MU - Mauritius 3
PT - Portogallo 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BN - Brunei Darussalam 2
DO - Repubblica Dominicana 2
EU - Europa 2
GT - Guatemala 2
GY - Guiana 2
KG - Kirghizistan 2
KW - Kuwait 2
LA - Repubblica Popolare Democratica del Laos 2
LY - Libia 2
NZ - Nuova Zelanda 2
BH - Bahrain 1
BS - Bahamas 1
Totale 24.858
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Città #
Ashburn 1.367
Ann Arbor 1.240
Singapore 1.176
Woodbridge 1.128
Fairfield 906
Chandler 717
Houston 701
San Jose 681
Hong Kong 627
Jacksonville 614
Dublin 545
Toronto 545
Frankfurt am Main 400
Seattle 363
Santa Clara 354
Cambridge 336
New York 305
Wilmington 300
Dearborn 279
Milan 260
Council Bluffs 226
Dallas 208
Beijing 204
Hefei 198
Princeton 194
Chicago 142
Shanghai 133
Los Angeles 126
Hanoi 125
Seoul 125
The Dalles 125
Dong Ket 108
Nanjing 108
Ho Chi Minh City 98
Lachine 97
Altamura 85
Lauterbourg 85
Lawrence 84
Buffalo 69
Boardman 63
Rome 62
Andover 55
San Diego 51
Philadelphia 49
Southend 43
Guangzhou 41
Moscow 41
Vienna 38
São Paulo 37
Changsha 35
Munich 35
Nanchang 34
Shenyang 34
Baghdad 33
Huizen 32
Helsinki 31
Brooklyn 28
Falls Church 26
Atlanta 24
Brussels 23
Hebei 23
Ottawa 23
Tashkent 23
Phoenix 21
Jinan 20
London 20
Columbus 19
Lahore 19
Mountain View 19
Norwalk 19
Jiaxing 18
Dhaka 17
Chennai 16
Da Nang 16
Montreal 16
Orem 16
Tianjin 16
Warsaw 16
Amsterdam 15
Boston 15
Brasília 15
Fremont 15
Rio de Janeiro 14
Tokyo 14
Washington 14
Denver 13
Mumbai 13
Nairobi 13
Redondo Beach 13
Salt Lake City 13
Belo Horizonte 12
Detroit 12
Haiphong 12
Las Vegas 12
Turku 12
Hangzhou 11
New Delhi 11
Riyadh 11
Sacramento 11
San Mateo 11
Totale 16.818
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Nome #
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 379
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 369
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 365
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 326
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 324
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 322
Optical spin injection and spin lifetime in Ge heterostructures 318
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 310
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 309
Raman efficiency in SiGe alloys 308
Optical spin injection and spin lifetime in Ge heterostructures 308
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 304
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 302
Valley-dependent spin polarization and long-lived electron spins in germanium 301
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 299
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 298
Characterization Studies of Purified HgI2 Precursors 296
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN 296
Photoluminescence circular dichroism and spin polarization in Germanium 291
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 290
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures 289
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 288
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 287
Large area HgI2 pixel detector experiments 285
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 284
Thermal tunability of monolithic polymer microcavities 283
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 282
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 277
NEUTRON-IRRADIATION EFFECTS IN AMORPHOUS SIO2 - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC-RESONANCE 277
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 276
Self-aggregation of InAs quantum dots on (N11) GaAs substrates 275
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 275
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 273
Phonon strain shift coefficients in SixGe1-x alloys 272
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 272
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 271
Raman Spectroscopy of Si1-xGex Epilayers 270
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 268
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: The (311)A case 267
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 267
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 264
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 264
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 263
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 261
Emission lineshape in strain free quantum dot 261
Towards imaging with polycrystalline mercuric iodide semiconductor detectors 260
Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells 260
Optical spin injection in SiGe heterostructures 260
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 259
Direct gap related optical transitions in Ge/SiGe quantum wells 259
Spin-resolved study of direct band-gap recombination in bulk Ge 259
Optical spin orientation in SiGe heterostructures 258
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 256
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 254
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 253
InAs quantum dots grown on nonconventionally oriented GaAs substrates 252
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 251
Ge Crystals on Si Show Their Light 251
Determination of Raman Efficiency in SiGe Alloys 250
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 249
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 247
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 246
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 245
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 243
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 241
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 240
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations 233
Robust optical orientation of spins in Ge/SiGe quantum wells 233
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 231
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 228
NEUTRON-IRRADIATION EFFECTS IN QUARTZ - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC RESONANCE 228
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 227
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 226
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 226
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 225
Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 223
Ge/SiGe multiple quantum wells on high index Si substrates 219
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 218
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 218
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 218
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 217
3D island nucleation behaviour on high index substrates 216
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 216
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 214
Strain-induced shift of phonon modes in Si1-xGex alloys 213
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 212
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 212
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 210
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 209
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 207
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 201
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 200
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 199
Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures 197
III/V Semiconductor Quantum Dots 175
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 171
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon 168
Totale 25.049
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Categoria #
all - tutte 80.521
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 80.521
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022823 0 0 0 86 70 78 71 60 65 85 83 225
2022/20232.440 244 740 231 264 173 355 26 107 172 12 87 29
2023/20241.475 52 41 71 34 203 455 329 35 76 8 17 154
2024/20252.844 153 339 139 125 218 160 84 186 207 467 208 558
2025/20267.422 693 603 597 640 684 335 994 377 711 617 642 529
2026/20271.372 135 270 685 282 0 0 0 0 0 0 0 0
Totale 25.049