Bicocca Open Archive

Logo unimib boa
GUZZI, MARIO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 12.489
AS - Asia 5.512
EU - Europa 4.757
SA - Sud America 656
AF - Africa 114
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 5
Totale 23.539
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 11.727
SG - Singapore 2.081
CN - Cina 1.308
SE - Svezia 782
CA - Canada 695
IT - Italia 693
DE - Germania 690
HK - Hong Kong 631
RU - Federazione Russa 594
VN - Vietnam 585
UA - Ucraina 565
IE - Irlanda 556
BR - Brasile 482
GB - Regno Unito 305
IN - India 210
FR - Francia 181
FI - Finlandia 143
KR - Corea 132
BD - Bangladesh 94
IQ - Iraq 73
NL - Olanda 63
AR - Argentina 59
PK - Pakistan 55
TR - Turchia 47
JP - Giappone 46
AT - Austria 45
MX - Messico 37
SA - Arabia Saudita 37
PH - Filippine 35
MA - Marocco 30
EC - Ecuador 29
UZ - Uzbekistan 28
BE - Belgio 26
ID - Indonesia 26
PL - Polonia 25
ZA - Sudafrica 22
CO - Colombia 20
VE - Venezuela 18
CL - Cile 17
ES - Italia 16
KE - Kenya 16
DK - Danimarca 15
IR - Iran 13
MY - Malesia 13
NP - Nepal 13
PY - Paraguay 11
AE - Emirati Arabi Uniti 10
JO - Giordania 10
IL - Israele 9
TN - Tunisia 9
DZ - Algeria 8
EG - Egitto 8
UY - Uruguay 8
JM - Giamaica 7
RO - Romania 7
TH - Thailandia 7
AZ - Azerbaigian 6
BO - Bolivia 6
CH - Svizzera 6
CZ - Repubblica Ceca 6
PS - Palestinian Territory 6
RS - Serbia 6
TW - Taiwan 6
CR - Costa Rica 5
HU - Ungheria 5
KZ - Kazakistan 5
LB - Libano 5
LT - Lituania 5
AU - Australia 4
OM - Oman 4
PA - Panama 4
PE - Perù 4
SN - Senegal 4
AL - Albania 3
BG - Bulgaria 3
ET - Etiopia 3
GR - Grecia 3
HN - Honduras 3
HR - Croazia 3
MM - Myanmar 3
MU - Mauritius 3
PT - Portogallo 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BN - Brunei Darussalam 2
EU - Europa 2
GT - Guatemala 2
GY - Guiana 2
KG - Kirghizistan 2
KW - Kuwait 2
LA - Repubblica Popolare Democratica del Laos 2
LY - Libia 2
NI - Nicaragua 2
NZ - Nuova Zelanda 2
BH - Bahrain 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
Totale 23.520
Salva come PNG Salva come JPEG
Città #
Ann Arbor 1.240
Singapore 1.171
Woodbridge 1.127
Ashburn 1.111
Fairfield 906
Chandler 716
Houston 696
Hong Kong 625
Jacksonville 612
San Jose 594
Dublin 544
Toronto 542
Frankfurt am Main 400
Seattle 359
Cambridge 336
Santa Clara 334
New York 299
Wilmington 299
Dearborn 279
Milan 259
Dallas 203
Beijing 201
Hefei 198
Princeton 194
Chicago 139
Shanghai 132
Hanoi 125
Seoul 125
The Dalles 124
Los Angeles 119
Dong Ket 108
Nanjing 108
Ho Chi Minh City 98
Lachine 97
Council Bluffs 90
Altamura 85
Lauterbourg 85
Lawrence 84
Buffalo 68
Boardman 63
Andover 55
Rome 55
San Diego 51
Southend 43
Guangzhou 41
Moscow 41
Philadelphia 40
Vienna 38
São Paulo 37
Changsha 35
Munich 35
Nanchang 34
Shenyang 34
Baghdad 33
Huizen 32
Helsinki 31
Falls Church 26
Brooklyn 23
Brussels 23
Hebei 23
Tashkent 23
Ottawa 21
Jinan 20
Lahore 19
London 19
Mountain View 19
Jiaxing 18
Dhaka 17
Norwalk 17
Chennai 16
Da Nang 16
Orem 16
Phoenix 16
Tianjin 16
Warsaw 16
Amsterdam 15
Columbus 15
Fremont 15
Montreal 15
Boston 14
Brasília 14
Rio de Janeiro 14
Tokyo 14
Mumbai 13
Nairobi 13
Redondo Beach 13
Salt Lake City 13
Belo Horizonte 12
Haiphong 12
Turku 12
Atlanta 11
Hangzhou 11
New Delhi 11
Riyadh 11
Sacramento 11
San Mateo 11
Zhengzhou 11
Buenos Aires 10
Curitiba 10
Denver 10
Totale 16.205
Salva come PNG Salva come JPEG
Nome #
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 362
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 353
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 340
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 312
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 308
Optical spin injection and spin lifetime in Ge heterostructures 302
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 300
Optical spin injection and spin lifetime in Ge heterostructures 298
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 297
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 296
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 292
Raman efficiency in SiGe alloys 292
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 288
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 285
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 282
Characterization Studies of Purified HgI2 Precursors 281
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN 281
Valley-dependent spin polarization and long-lived electron spins in germanium 277
Thermal tunability of monolithic polymer microcavities 273
Large area HgI2 pixel detector experiments 273
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures 272
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 272
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 270
Self-aggregation of InAs quantum dots on (N11) GaAs substrates 269
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 269
Photoluminescence circular dichroism and spin polarization in Germanium 268
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 267
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 267
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 263
NEUTRON-IRRADIATION EFFECTS IN AMORPHOUS SIO2 - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC-RESONANCE 263
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 263
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 262
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 262
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 260
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 259
Phonon strain shift coefficients in SixGe1-x alloys 259
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 259
Raman Spectroscopy of Si1-xGex Epilayers 258
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 252
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 252
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 252
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: The (311)A case 251
Direct gap related optical transitions in Ge/SiGe quantum wells 250
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 250
Towards imaging with polycrystalline mercuric iodide semiconductor detectors 249
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 248
Emission lineshape in strain free quantum dot 247
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 247
Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells 247
InAs quantum dots grown on nonconventionally oriented GaAs substrates 244
Optical spin injection in SiGe heterostructures 243
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 241
Optical spin orientation in SiGe heterostructures 241
Determination of Raman Efficiency in SiGe Alloys 239
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 238
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 238
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 236
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 236
Spin-resolved study of direct band-gap recombination in bulk Ge 236
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 234
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 234
Ge Crystals on Si Show Their Light 232
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 231
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 230
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 227
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 224
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 221
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 220
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 219
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 216
Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence 214
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations 213
Robust optical orientation of spins in Ge/SiGe quantum wells 213
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 212
NEUTRON-IRRADIATION EFFECTS IN QUARTZ - OPTICAL-ABSORPTION AND ELECTRON-PARAMAGNETIC RESONANCE 211
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 210
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 210
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 207
Strain-induced shift of phonon modes in Si1-xGex alloys 206
3D island nucleation behaviour on high index substrates 206
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 205
Ge/SiGe multiple quantum wells on high index Si substrates 203
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 202
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 202
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 202
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 200
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 198
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 196
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 194
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 191
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 188
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 188
Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures 187
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 187
III/V Semiconductor Quantum Dots 165
Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon 160
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 160
Totale 23.709
Salva come PNG Salva come JPEG
Categoria #
all - tutte 75.631
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 75.631
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.233 23 109 278 86 70 78 71 60 65 85 83 225
2022/20232.440 244 740 231 264 173 355 26 107 172 12 87 29
2023/20241.475 52 41 71 34 203 455 329 35 76 8 17 154
2024/20252.844 153 339 139 125 218 160 84 186 207 467 208 558
2025/20267.422 693 603 597 640 684 335 994 377 711 617 642 529
2026/202732 32 0 0 0 0 0 0 0 0 0 0 0
Totale 23.709