MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
Continente #
NA - Nord America 25.881
AS - Asia 14.019
EU - Europa 11.886
SA - Sud America 1.734
Continente sconosciuto - Info sul continente non disponibili 1.176
AF - Africa 315
OC - Oceania 21
Totale 55.032
Nazione #
US - Stati Uniti d'America 24.315
SG - Singapore 5.143
IT - Italia 3.019
CN - Cina 2.969
VN - Vietnam 1.887
HK - Hong Kong 1.807
DE - Germania 1.775
RU - Federazione Russa 1.592
CA - Canada 1.376
SE - Svezia 1.311
BR - Brasile 1.297
IE - Irlanda 878
UA - Ucraina 833
GB - Regno Unito 656
FR - Francia 515
IN - India 443
BD - Bangladesh 317
FI - Finlandia 292
KR - Corea 263
ES - Italia 237
TR - Turchia 199
AT - Austria 179
AR - Argentina 157
ID - Indonesia 151
IQ - Iraq 127
NL - Olanda 125
PK - Pakistan 118
JP - Giappone 116
CH - Svizzera 113
ZA - Sudafrica 92
MX - Messico 85
SA - Arabia Saudita 77
CO - Colombia 73
DK - Danimarca 72
BE - Belgio 64
EC - Ecuador 63
PL - Polonia 59
PH - Filippine 58
UZ - Uzbekistan 44
VE - Venezuela 41
CL - Cile 37
MA - Marocco 37
TW - Taiwan 33
KE - Kenya 27
NP - Nepal 27
PY - Paraguay 27
TN - Tunisia 26
IL - Israele 25
AE - Emirati Arabi Uniti 24
EU - Europa 23
MY - Malesia 23
ET - Etiopia 22
JO - Giordania 22
JM - Giamaica 21
TH - Thailandia 20
LT - Lituania 19
AU - Australia 18
EG - Egitto 18
AZ - Azerbaigian 17
DZ - Algeria 17
AL - Albania 16
CR - Costa Rica 16
HN - Honduras 15
HU - Ungheria 15
PE - Perù 15
OM - Oman 14
PT - Portogallo 13
RO - Romania 13
CI - Costa d'Avorio 12
CZ - Repubblica Ceca 12
DO - Repubblica Dominicana 12
IR - Iran 12
SN - Senegal 12
UY - Uruguay 12
KG - Kirghizistan 11
LB - Libano 10
NI - Nicaragua 10
BO - Bolivia 9
GE - Georgia 9
GR - Grecia 9
RS - Serbia 9
SC - Seychelles 9
BG - Bulgaria 8
BY - Bielorussia 8
KZ - Kazakistan 8
MD - Moldavia 8
NO - Norvegia 8
TT - Trinidad e Tobago 8
BH - Bahrain 7
PS - Palestinian Territory 7
AO - Angola 6
ME - Montenegro 6
MU - Mauritius 6
PA - Panama 6
SY - Repubblica araba siriana 6
EE - Estonia 5
ZW - Zimbabwe 5
GA - Gabon 4
KW - Kuwait 4
LK - Sri Lanka 4
Totale 53.800
Città #
Ann Arbor 4.395
Singapore 2.863
Ashburn 1.857
Hong Kong 1.748
Woodbridge 1.563
San Jose 1.470
Fairfield 1.242
Frankfurt am Main 1.241
Chandler 1.191
Houston 1.180
Milan 1.164
Toronto 1.053
Jacksonville 864
Dublin 829
Wilmington 679
Santa Clara 655
Dearborn 555
New York 505
Seattle 498
Beijing 477
Dallas 469
Ho Chi Minh City 451
Council Bluffs 439
Princeton 419
Cambridge 382
Hanoi 373
Chicago 363
Los Angeles 360
The Dalles 352
Hefei 332
Dong Ket 254
Nanjing 224
Seoul 219
Lauterbourg 209
Shanghai 191
Altamura 169
Rome 168
Buffalo 155
Lawrence 147
Vienna 140
Moscow 137
Lachine 136
São Paulo 133
Columbus 109
Jakarta 97
San Diego 93
Helsinki 89
Boardman 86
Nanchang 86
Turin 75
Shenyang 72
Guangzhou 69
London 67
Valladolid 67
Zurich 65
Dresden 62
Phoenix 59
Andover 58
Changsha 57
Tianjin 57
Haiphong 56
Tokyo 56
Da Nang 55
Hebei 55
Orem 53
Brooklyn 51
Atlanta 50
Montreal 50
Washington 49
Baghdad 46
Philadelphia 46
Chennai 45
Ottawa 45
Brussels 44
Jinan 44
Munich 44
Rio de Janeiro 43
Southend 43
Naples 42
Pune 42
Dhaka 39
Sacramento 39
Basingstoke 38
Jiaxing 38
Warsaw 38
Falls Church 37
Norwalk 37
Lahore 36
Monza 34
Redondo Beach 34
Boston 33
Denver 32
Hangzhou 32
Kent 32
San Francisco 32
Nuremberg 31
Zhengzhou 31
Huizen 30
Johannesburg 30
Riyadh 30
Totale 35.161
Nome #
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 468
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 459
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 450
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 435
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 429
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 416
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 408
Computational analysis of low-energy dislocation configurations in graded layers 379
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 375
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 371
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 367
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 362
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 357
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 354
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 353
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 351
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 345
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 339
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 333
Dislocation-free SiGe/Si heterostructures 332
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 330
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 329
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 328
Dynamics of crosshatch patterns in heteroepitaxy 322
Slip trace-induced terrace erosion 320
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 319
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 313
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 308
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 307
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 300
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 295
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 294
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 288
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 287
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 287
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 287
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 286
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 286
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 285
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 284
Self-ordering of a Ge island single layer induced by Si overgrowth 283
SiGe nano-stressors for Ge strain-engineering 283
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 283
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 277
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 277
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 276
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 275
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 273
Spontaneous Ge island ordering promoted by partial silicon capping 272
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 272
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 272
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 271
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 270
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 269
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 268
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 267
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 266
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 266
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 264
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 263
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 261
Dynamics of pit filling in heteroepitaxy via phase-field simulations 261
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 260
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 259
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 258
Simulating morphological evolutions by Convolutional Neural Networks 257
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 257
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 256
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 254
Self-assembled GaAs islands on Si by droplet epitaxy 253
Strained MOSFETs on ordered SiGe dots 253
Si/Ge exchange mechanisms at the Ge(105) surface 252
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 251
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 251
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 251
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 250
Continuum modeling of heteroepitaxial growth in semiconductors 249
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 248
Modelling the kinetic growth mode of GaAs nanomembranes 248
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 246
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 245
Cell cycle effects of gemcitabine 245
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 244
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 243
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 243
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 243
Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy 242
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 242
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 242
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 239
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 239
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 239
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 238
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 237
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 236
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 236
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001) 234
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 233
Morphological evolution and compositional segregation effects in core-shell nanowires 233
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 232
Totale 29.045
Categoria #
all - tutte 175.381
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 175.381


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.477 0 337 535 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20258.042 386 963 417 371 640 337 337 407 808 1.091 697 1.588
2025/202618.943 1.547 1.203 1.619 1.397 2.071 997 2.823 975 1.669 1.520 1.598 1.524
2026/20271.120 625 495 0 0 0 0 0 0 0 0 0 0
Totale 55.032