Bicocca Open Archive

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MONTALENTI, FRANCESCO CIMBRO MATTIA
 Distribuzione geografica
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Continente #
NA - Nord America 29.047
AS - Asia 14.060
EU - Europa 12.136
SA - Sud America 1.767
Continente sconosciuto - Info sul continente non disponibili 1.183
AF - Africa 318
OC - Oceania 21
Totale 58.532
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Nazione #
US - Stati Uniti d'America 27.388
SG - Singapore 5.147
IT - Italia 3.167
CN - Cina 2.973
VN - Vietnam 1.891
HK - Hong Kong 1.811
DE - Germania 1.782
RU - Federazione Russa 1.599
CA - Canada 1.421
BR - Brasile 1.312
SE - Svezia 1.311
IE - Irlanda 879
UA - Ucraina 834
GB - Regno Unito 697
FR - Francia 524
IN - India 444
BD - Bangladesh 323
FI - Finlandia 292
KR - Corea 264
ES - Italia 240
TR - Turchia 201
AT - Austria 187
AR - Argentina 159
ID - Indonesia 151
NL - Olanda 134
IQ - Iraq 127
PK - Pakistan 118
JP - Giappone 117
CH - Svizzera 113
ZA - Sudafrica 92
MX - Messico 89
CO - Colombia 81
SA - Arabia Saudita 80
DK - Danimarca 78
EC - Ecuador 66
BE - Belgio 65
PL - Polonia 62
PH - Filippine 59
UZ - Uzbekistan 44
VE - Venezuela 43
CL - Cile 38
MA - Marocco 37
JM - Giamaica 33
TW - Taiwan 33
NP - Nepal 29
PY - Paraguay 28
CR - Costa Rica 27
IL - Israele 27
KE - Kenya 27
TN - Tunisia 26
AE - Emirati Arabi Uniti 24
MY - Malesia 24
EU - Europa 23
ET - Etiopia 22
JO - Giordania 22
TH - Thailandia 22
HN - Honduras 19
LT - Lituania 19
AU - Australia 18
EG - Egitto 18
AZ - Azerbaigian 17
DZ - Algeria 17
AL - Albania 16
HU - Ungheria 15
PE - Perù 15
TT - Trinidad e Tobago 15
OM - Oman 14
PT - Portogallo 14
RO - Romania 13
UY - Uruguay 13
CI - Costa d'Avorio 12
CZ - Repubblica Ceca 12
DO - Repubblica Dominicana 12
IR - Iran 12
NI - Nicaragua 12
SN - Senegal 12
KG - Kirghizistan 11
LB - Libano 10
SC - Seychelles 10
BO - Bolivia 9
GE - Georgia 9
GR - Grecia 9
NO - Norvegia 9
RS - Serbia 9
BG - Bulgaria 8
BH - Bahrain 8
BY - Bielorussia 8
EE - Estonia 8
KZ - Kazakistan 8
MD - Moldavia 8
PS - Palestinian Territory 7
AO - Angola 6
GT - Guatemala 6
ME - Montenegro 6
MU - Mauritius 6
PA - Panama 6
SY - Repubblica araba siriana 6
PR - Porto Rico 5
ZW - Zimbabwe 5
AM - Armenia 4
Totale 57.283
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Città #
Ann Arbor 4.395
Singapore 2.865
Ashburn 2.447
Hong Kong 1.751
San Jose 1.745
Woodbridge 1.563
Fairfield 1.243
Frankfurt am Main 1.241
Milan 1.201
Chandler 1.193
Houston 1.185
Toronto 1.066
Jacksonville 871
Dublin 829
Wilmington 681
Santa Clara 680
Council Bluffs 631
Dearborn 556
New York 527
Seattle 509
Dallas 492
Beijing 477
Ho Chi Minh City 454
Princeton 420
Los Angeles 384
Cambridge 382
Chicago 382
Hanoi 373
The Dalles 352
Hefei 332
Dong Ket 254
Nanjing 224
Seoul 219
Lauterbourg 209
Shanghai 192
Rome 178
Altamura 169
Buffalo 163
Lawrence 148
Vienna 141
São Paulo 138
Moscow 137
Lachine 136
Columbus 118
Jakarta 97
San Diego 96
Phoenix 92
Helsinki 89
Boardman 86
Nanchang 86
Turin 80
Atlanta 72
Shenyang 72
London 70
Guangzhou 69
Valladolid 67
Zurich 65
Dresden 62
Andover 58
Montreal 58
Philadelphia 58
Brooklyn 57
Changsha 57
Tianjin 57
Haiphong 56
Tokyo 56
Da Nang 55
Hebei 55
Orem 55
Washington 51
Denver 48
Naples 47
Baghdad 46
Ottawa 46
Chennai 45
Munich 45
Brussels 44
Jinan 44
Rio de Janeiro 44
Sacramento 44
Southend 43
Pune 42
Norwalk 41
Warsaw 41
Dhaka 39
San Francisco 39
Basingstoke 38
Jiaxing 38
Boston 37
Falls Church 37
Lahore 36
Kent 34
Monza 34
Redondo Beach 34
Hangzhou 32
Newark 31
Nuremberg 31
Zhengzhou 31
Amsterdam 30
Huizen 30
Totale 36.600
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Nome #
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 481
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 471
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 470
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 451
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 443
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 427
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 424
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 402
Computational analysis of low-energy dislocation configurations in graded layers 392
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 384
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 383
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 379
Dislocation-free SiGe/Si heterostructures 377
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 376
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 373
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 373
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 366
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 365
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 355
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 348
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 347
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 346
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 344
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 340
Dynamics of crosshatch patterns in heteroepitaxy 337
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 335
Slip trace-induced terrace erosion 326
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 323
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 320
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 319
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 318
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 316
SiGe nano-stressors for Ge strain-engineering 311
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 310
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 309
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 307
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 306
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 302
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 302
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 302
Self-ordering of a Ge island single layer induced by Si overgrowth 296
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 296
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 295
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 295
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 294
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 292
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 289
Spontaneous Ge island ordering promoted by partial silicon capping 287
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 287
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 286
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 285
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 284
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 283
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 282
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 281
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 281
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 280
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 280
Strained MOSFETs on ordered SiGe dots 279
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 278
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 275
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 275
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 274
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 274
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 273
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 273
Dynamics of pit filling in heteroepitaxy via phase-field simulations 273
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 273
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 270
Simulating morphological evolutions by Convolutional Neural Networks 267
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 267
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 266
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 266
Continuum modeling of heteroepitaxial growth in semiconductors 263
Modelling the kinetic growth mode of GaAs nanomembranes 262
Si/Ge exchange mechanisms at the Ge(105) surface 261
Self-assembled GaAs islands on Si by droplet epitaxy 261
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 260
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 260
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 259
Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy 259
Cell cycle effects of gemcitabine 259
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 259
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 258
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 257
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 257
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 255
Ab initio results for the adiabatic atom-surface interaction for helium and neon on a simple metal 255
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 255
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 255
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 254
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 253
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 252
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 252
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 252
Morphological evolution and compositional segregation effects in core-shell nanowires 252
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 251
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 248
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 247
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 246
Totale 30.618
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Categoria #
all - tutte 184.691
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 184.691
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.605 0 0 0 378 217 280 221 206 188 311 277 527
2022/20235.121 575 1.451 559 555 324 720 60 236 343 57 139 102
2023/20243.066 103 163 129 117 459 716 549 140 236 47 67 340
2024/20258.042 386 963 417 371 640 337 337 407 808 1.091 697 1.588
2025/202618.943 1.547 1.203 1.619 1.397 2.071 997 2.823 975 1.669 1.520 1.598 1.524
2026/20274.620 625 829 2.083 1.083 0 0 0 0 0 0 0 0
Totale 58.532