Bicocca Open Archive

Logo unimib boa
MARZEGALLI, ANNA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 10.083
AS - Asia 6.300
EU - Europa 5.234
SA - Sud America 802
AF - Africa 188
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 5
Totale 22.632
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 9.677
SG - Singapore 2.279
CN - Cina 1.394
IT - Italia 1.185
DE - Germania 883
HK - Hong Kong 761
VN - Vietnam 742
RU - Federazione Russa 732
BR - Brasile 593
SE - Svezia 580
IE - Irlanda 361
CA - Canada 331
GB - Regno Unito 311
UA - Ucraina 285
FR - Francia 277
IN - India 217
KR - Corea 130
FI - Finlandia 123
ES - Italia 119
BD - Bangladesh 107
ID - Indonesia 103
JP - Giappone 103
AT - Austria 97
TR - Turchia 81
AR - Argentina 68
ZA - Sudafrica 65
IQ - Iraq 63
NL - Olanda 54
PK - Pakistan 48
MX - Messico 46
DK - Danimarca 45
CH - Svizzera 42
PH - Filippine 40
CO - Colombia 37
SA - Arabia Saudita 35
MA - Marocco 32
BE - Belgio 29
PL - Polonia 27
UZ - Uzbekistan 26
EC - Ecuador 25
MY - Malesia 20
TW - Taiwan 20
VE - Venezuela 19
AE - Emirati Arabi Uniti 18
AU - Australia 18
NP - Nepal 17
KE - Kenya 15
PE - Perù 15
PY - Paraguay 15
TN - Tunisia 15
CL - Cile 14
ET - Etiopia 14
JO - Giordania 14
DZ - Algeria 11
UY - Uruguay 11
AZ - Azerbaigian 10
CZ - Repubblica Ceca 9
OM - Oman 9
TH - Thailandia 9
AL - Albania 8
GR - Grecia 8
IL - Israele 8
LB - Libano 8
SI - Slovenia 8
HU - Ungheria 7
LT - Lituania 7
NO - Norvegia 7
CI - Costa d'Avorio 6
JM - Giamaica 6
NI - Nicaragua 6
BY - Bielorussia 5
PS - Palestinian Territory 5
SN - Senegal 5
BG - Bulgaria 4
DO - Repubblica Dominicana 4
GE - Georgia 4
IR - Iran 4
PT - Portogallo 4
RS - Serbia 4
AM - Armenia 3
AO - Angola 3
BO - Bolivia 3
EG - Egitto 3
GA - Gabon 3
KG - Kirghizistan 3
KW - Kuwait 3
KZ - Kazakistan 3
LV - Lettonia 3
RO - Romania 3
SC - Seychelles 3
SY - Repubblica araba siriana 3
BH - Bahrain 2
EE - Estonia 2
EU - Europa 2
GY - Guiana 2
HN - Honduras 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
MD - Moldavia 2
MU - Mauritius 2
Totale 22.598
Salva come PNG Salva come JPEG
Città #
Ann Arbor 1.841
Singapore 1.330
Hong Kong 745
San Jose 738
Ashburn 732
Woodbridge 631
Frankfurt am Main 611
Fairfield 501
Chandler 491
Milan 421
Houston 339
Dublin 338
Wilmington 292
Jacksonville 275
Santa Clara 239
Beijing 229
New York 212
Toronto 209
Dallas 189
Dearborn 181
Seattle 180
Los Angeles 173
Cambridge 169
The Dalles 168
Ho Chi Minh City 154
Chicago 153
Princeton 153
Hefei 149
Hanoi 145
Seoul 109
Guangzhou 99
Dong Ket 92
Nanjing 88
Lauterbourg 85
Buffalo 81
Vienna 79
Shanghai 69
Council Bluffs 66
Moscow 66
São Paulo 66
Jakarta 65
Altamura 55
Lawrence 54
Southend 43
Helsinki 40
Lachine 40
San Diego 38
Munich 37
Monza 35
Rome 34
Nanchang 33
Tokyo 33
Paris 32
Boardman 30
Orem 30
Brooklyn 29
Chennai 29
Montreal 28
Shenyang 28
Andover 27
London 27
Tianjin 27
Da Nang 25
Pune 25
Stockholm 25
Haiphong 24
Johannesburg 24
Miyamae Ku 23
Zhengzhou 23
Boston 22
Denver 20
Dhaka 20
Kent 20
Naples 20
Tashkent 20
Valladolid 20
Zurich 20
Baghdad 19
Como 19
Sesto San Giovanni 19
Berlin 18
Hebei 18
Jinan 18
Phoenix 18
Sacramento 18
Turin 18
Warsaw 18
Atlanta 17
Dalmine 17
Nuremberg 17
Umeda 17
Brussels 16
Ottawa 16
Turku 16
Vigano San Martino 16
Changsha 15
Mexico City 15
Ningbo 15
Rio de Janeiro 15
Ankara 14
Totale 14.402
Salva come PNG Salva come JPEG
Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 440
In-plane selective area InSb–Al nanowire quantum networks 378
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 357
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 354
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 351
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 345
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 341
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 341
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 340
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 337
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 331
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 323
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 321
"Divide et impera" in detector technology 305
Integration of MOSFETs with SiGe dots as stressor material 303
Dynamics of crosshatch patterns in heteroepitaxy 301
Hexagonal Diamond phase of Si and Ge by nanoindentation 298
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 296
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 289
Modeling the dynamics of cross-hatch evolution in heteroepitaxy 282
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 278
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 277
Optical properties of shuffle dislocations in silicon 275
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 271
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 269
Vacancy-mediated climbing motion of dislocations in Ge/Si films: atomic-scale insights via molecular dynamics 269
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 265
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 260
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 259
Controlling the relaxation mechanism of low strain Si1- x Gex /Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 256
3D heteroepitaxy of mismatched semiconductors on silicon 253
Hexagonal Si and Ge polytypes for silicon photonics 251
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 249
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 247
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 242
Perfect crystals grown from imperfect interfaces 242
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 241
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 240
Strained MOSFETs on ordered SiGe dots 239
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 239
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 238
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 237
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 235
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 233
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 231
Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations 230
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling 228
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 226
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 222
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain- dependent dislocation nature 219
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 218
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 218
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 217
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 215
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 214
Critical shape and size for dislocation nucleation in si1-xGex islands on Si(001) 214
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 212
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 211
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 211
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 211
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 207
Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications 206
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 206
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 205
Fully coherent growth of Ge on free-standing Si(001) nanomesas 201
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 201
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 197
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 197
Atomistic simulation of a 60 degrees shuffle dislocation segment migrating in a Ge/SiGe(001) epitaxial film 192
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 191
New approaches and understandings in the growth of cubic silicon carbide 188
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 187
Onset of vertical threading dislocations in Si1-xGex/Si (001) at a critical Ge concentration 187
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 186
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 184
Epitaxial Ge-crystal arrays for X-ray detection 176
Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction 175
Theoretical interpretation of tilting-angle maps in heteroepitaxial films 175
Dynamics of cross-hatch evolution in heteroepitaxy 173
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 171
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 163
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro-Disk by 5D X-ray Diffraction Microscopy 161
Stress engineering of boron doped diamond thin films via micro-fabrication 161
Misfit relaxation in heteroepitaxy: A theoretical method for inferring individual dislocation positions from tilting maps 160
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4) 157
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 156
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 156
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 152
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 150
Unveiling Planar Defects in Hexagonal Group IV Materials 149
Three-dimensional EpitaxialSi1-xGex, Ge and SiC Crystals onDeeply Patterned Si substrates 143
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale 138
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 129
Understanding complex dislocation behavior and reactions in advanced GeSi epitaxy 128
3C-SiC epitaxy on deeply patterned Si(111) substrates 120
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 111
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 108
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 108
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 104
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 90
Totale 22.744
Salva come PNG Salva come JPEG
Categoria #
all - tutte 69.932
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.932
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021455 0 0 0 0 0 0 0 0 0 0 141 314
2021/20221.462 140 133 206 177 60 116 66 83 72 108 103 198
2022/20232.232 250 592 239 254 120 277 28 128 153 42 80 69
2023/20241.393 59 81 41 45 187 333 229 64 140 42 43 129
2024/20253.622 153 429 226 221 298 178 149 181 333 559 308 587
2025/20268.561 775 597 673 748 1.288 521 1.447 453 895 762 402 0
Totale 23.263