BERGAMASCHINI, ROBERTO
 Distribuzione geografica
Continente #
NA - Nord America 10.655
AS - Asia 6.890
EU - Europa 5.356
SA - Sud America 871
AF - Africa 188
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 6
Totale 23.976
Nazione #
US - Stati Uniti d'America 10.224
SG - Singapore 2.364
CN - Cina 1.510
VN - Vietnam 1.140
IT - Italia 1.124
DE - Germania 1.030
HK - Hong Kong 833
RU - Federazione Russa 755
BR - Brasile 645
SE - Svezia 493
IE - Irlanda 394
CA - Canada 354
GB - Regno Unito 313
FR - Francia 268
UA - Ucraina 254
IN - India 199
AT - Austria 149
FI - Finlandia 149
BD - Bangladesh 129
KR - Corea 113
ID - Indonesia 101
ES - Italia 100
TR - Turchia 92
AR - Argentina 80
CH - Svizzera 73
IQ - Iraq 70
ZA - Sudafrica 65
NL - Olanda 62
PK - Pakistan 56
JP - Giappone 54
DK - Danimarca 48
MX - Messico 44
EC - Ecuador 38
CO - Colombia 37
SA - Arabia Saudita 36
PL - Polonia 31
PH - Filippine 30
BE - Belgio 29
MA - Marocco 25
VE - Venezuela 21
TW - Taiwan 19
UZ - Uzbekistan 17
MY - Malesia 16
CL - Cile 15
LT - Lituania 14
AZ - Azerbaigian 13
ET - Etiopia 13
TN - Tunisia 13
IL - Israele 11
PY - Paraguay 11
EG - Egitto 10
SC - Seychelles 10
UY - Uruguay 10
AL - Albania 9
CZ - Repubblica Ceca 9
PS - Palestinian Territory 9
AE - Emirati Arabi Uniti 8
CI - Costa d'Avorio 8
DZ - Algeria 8
JO - Giordania 8
KG - Kirghizistan 8
TH - Thailandia 8
AU - Australia 7
HU - Ungheria 7
JM - Giamaica 7
OM - Oman 7
PE - Perù 7
EU - Europa 6
GR - Grecia 6
LB - Libano 6
NP - Nepal 6
RS - Serbia 6
SN - Senegal 6
GE - Georgia 5
KE - Kenya 5
KZ - Kazakistan 5
PA - Panama 5
BG - Bulgaria 4
BO - Bolivia 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
LY - Libia 4
PT - Portogallo 4
RO - Romania 4
AO - Angola 3
BH - Bahrain 3
CR - Costa Rica 3
HN - Honduras 3
IR - Iran 3
LU - Lussemburgo 3
LV - Lettonia 3
MD - Moldavia 3
TT - Trinidad e Tobago 3
ZW - Zimbabwe 3
BB - Barbados 2
BZ - Belize 2
GA - Gabon 2
GH - Ghana 2
GY - Guiana 2
KH - Cambogia 2
Totale 23.940
Città #
Ann Arbor 1.993
Singapore 1.371
Hong Kong 809
Ashburn 755
San Jose 709
Frankfurt am Main 642
Woodbridge 600
Chandler 573
Fairfield 495
Milan 460
Houston 418
Dublin 373
Ho Chi Minh City 291
Wilmington 290
Dallas 289
Jacksonville 268
Beijing 260
Santa Clara 259
Hanoi 258
Toronto 218
New York 217
Seattle 204
Dearborn 201
Princeton 173
Los Angeles 162
Chicago 160
Dong Ket 156
Cambridge 152
The Dalles 139
Hefei 134
Nanjing 132
Vienna 126
Council Bluffs 123
Guangzhou 103
Lauterbourg 101
Seoul 100
Buffalo 76
Shanghai 74
Jakarta 71
São Paulo 68
Moscow 67
Dresden 62
Altamura 61
Helsinki 53
Boardman 48
Lawrence 45
Lachine 43
Southend 43
Haiphong 41
Orem 38
Nanchang 36
San Diego 36
Zurich 36
Valladolid 35
London 33
Tokyo 32
Da Nang 31
Munich 30
Phoenix 30
Basingstoke 26
Montreal 26
Baghdad 25
Ottawa 25
Andover 24
Brooklyn 24
Dhaka 24
Norwalk 24
Turin 24
Amsterdam 23
Shenyang 23
Brussels 22
Hangzhou 22
Lahore 22
Lausanne 22
Changsha 21
Denver 21
Hebei 20
Jinan 20
Johannesburg 20
Turku 20
Warsaw 20
Kent 19
Lappeenranta 19
Pune 19
Tianjin 19
Atlanta 18
Jiaxing 18
Riyadh 18
Rome 18
Chennai 17
Columbus 17
Mumbai 17
Quito 17
Monza 16
Redondo Beach 16
Rio de Janeiro 16
Sacramento 16
Stockholm 16
Boston 15
Düsseldorf 15
Totale 15.627
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 450
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 442
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 426
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 416
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 398
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 363
Optically reconfigurable polarized emission in Germanium 337
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 323
Dislocation-free SiGe/Si heterostructures 322
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 322
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 322
A Structural Characterization of GaAs MBE Grown on Si Pillars 311
Slip trace-induced terrace erosion 311
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 309
"Divide et impera" in detector technology 305
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 302
Strain engineering in Ge/GeSn core/shell nanowires 287
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 282
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 273
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 268
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 263
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 261
3D heteroepitaxy of mismatched semiconductors on silicon 253
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 251
Dynamics of pit filling in heteroepitaxy via phase-field simulations 250
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 249
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 248
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 247
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 247
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 247
Simulating morphological evolutions by Convolutional Neural Networks 243
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 241
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 239
Modelling the kinetic growth mode of GaAs nanomembranes 239
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 238
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 237
Continuum modeling of heteroepitaxial growth in semiconductors 237
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 233
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 233
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 231
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 231
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 230
Continuum models of heteroepitaxial growth on patterned substrates 228
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 228
Ge Crystals on Si Show Their Light 226
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 222
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 222
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 220
Morphological evolution and compositional segregation effects in core-shell nanowires 220
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 219
Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire 218
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 217
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 217
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 216
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 214
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 212
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 211
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 207
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 205
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 202
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 201
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 201
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 201
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 200
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 197
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 197
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 196
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 195
Strain and strain-driven effects in coaxial nanowires 194
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 194
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 193
Modeling semiconductor heteroepitaxy: a continuum approach 193
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 188
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 188
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 188
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 188
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 187
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 187
Semiconductor heteroepitaxy 186
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 184
Strain relaxation in semiconductor core/shell nanowires 183
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 182
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 181
Dynamics of pit filling in heteroepitaxy via phase-field simulations 181
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 178
Epitaxial Ge-crystal arrays for X-ray detection 176
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 174
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 174
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 173
Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired neural networks for the 3D microstructure evolution of materials via Cahn–Hilliard flow 171
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 170
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 170
ML-enabled boosting of growth simulations 169
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 168
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 168
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 166
Semiconductor Heteroepitaxy 165
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 161
Progressing strained layer growth by deep learning 160
A Neural-Network surrogate for microstructure dynamics and crystal growth 152
Totale 23.301
Categoria #
all - tutte 75.632
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 75.632


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021472 0 0 0 0 0 0 0 0 0 0 143 329
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20254.136 186 466 210 151 309 238 251 218 303 571 299 934
2025/20268.433 868 582 887 679 967 479 1.510 451 842 782 386 0
Totale 24.650