Bicocca Open Archive

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BERGAMASCHINI, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 11.222
AS - Asia 6.973
EU - Europa 5.801
SA - Sud America 881
AF - Africa 188
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 7
Totale 25.083
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Nazione #
US - Stati Uniti d'America 10.596
SG - Singapore 2.367
IT - Italia 1.553
CN - Cina 1.522
VN - Vietnam 1.169
DE - Germania 1.030
HK - Hong Kong 835
RU - Federazione Russa 755
BR - Brasile 647
CA - Canada 541
SE - Svezia 493
IE - Irlanda 394
GB - Regno Unito 313
FR - Francia 268
UA - Ucraina 255
IN - India 200
BD - Bangladesh 159
AT - Austria 150
FI - Finlandia 149
KR - Corea 113
ES - Italia 104
ID - Indonesia 101
TR - Turchia 92
AR - Argentina 83
CH - Svizzera 79
IQ - Iraq 70
NL - Olanda 66
ZA - Sudafrica 65
PK - Pakistan 57
JP - Giappone 56
DK - Danimarca 48
MX - Messico 45
CO - Colombia 39
EC - Ecuador 39
SA - Arabia Saudita 36
PL - Polonia 31
PH - Filippine 30
BE - Belgio 29
MA - Marocco 25
VE - Venezuela 22
TW - Taiwan 19
MY - Malesia 17
UZ - Uzbekistan 17
CL - Cile 16
LT - Lituania 14
AZ - Azerbaigian 13
ET - Etiopia 13
TN - Tunisia 13
IL - Israele 11
PY - Paraguay 11
AE - Emirati Arabi Uniti 10
EG - Egitto 10
SC - Seychelles 10
UY - Uruguay 10
AL - Albania 9
CZ - Repubblica Ceca 9
JM - Giamaica 9
PS - Palestinian Territory 9
AU - Australia 8
CI - Costa d'Avorio 8
DZ - Algeria 8
JO - Giordania 8
KG - Kirghizistan 8
TH - Thailandia 8
HU - Ungheria 7
OM - Oman 7
PE - Perù 7
EU - Europa 6
GR - Grecia 6
LB - Libano 6
NP - Nepal 6
RS - Serbia 6
SN - Senegal 6
GE - Georgia 5
KE - Kenya 5
KZ - Kazakistan 5
PA - Panama 5
BG - Bulgaria 4
BO - Bolivia 4
BY - Bielorussia 4
CR - Costa Rica 4
DO - Repubblica Dominicana 4
HN - Honduras 4
LY - Libia 4
PT - Portogallo 4
RO - Romania 4
TT - Trinidad e Tobago 4
AO - Angola 3
BH - Bahrain 3
IR - Iran 3
LU - Lussemburgo 3
LV - Lettonia 3
MD - Moldavia 3
NI - Nicaragua 3
ZW - Zimbabwe 3
BB - Barbados 2
BZ - Belize 2
GA - Gabon 2
GH - Ghana 2
GY - Guiana 2
Totale 25.045
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Città #
Ann Arbor 1.993
Singapore 1.373
San Jose 825
Hong Kong 810
Ashburn 785
Frankfurt am Main 642
Milan 631
Woodbridge 600
Chandler 573
Fairfield 495
Houston 419
Toronto 387
Dublin 373
Ho Chi Minh City 294
Dallas 293
Wilmington 290
Hanoi 271
Jacksonville 269
Santa Clara 268
Beijing 261
New York 224
Seattle 204
Dearborn 201
Los Angeles 178
Princeton 173
Chicago 160
Dong Ket 156
Cambridge 152
The Dalles 140
Hefei 134
Nanjing 132
Council Bluffs 127
Vienna 126
Guangzhou 103
Lauterbourg 101
Seoul 100
Rome 84
Buffalo 78
Shanghai 74
Jakarta 71
São Paulo 68
Moscow 67
Dresden 62
Altamura 61
Boardman 54
Helsinki 53
Lawrence 45
Lachine 43
Southend 43
Haiphong 41
Orem 38
Valladolid 38
Zurich 37
Nanchang 36
San Diego 36
Turin 35
London 33
Phoenix 33
Da Nang 32
Montreal 32
Tokyo 32
Munich 30
Columbus 29
Basingstoke 26
Brooklyn 26
Baghdad 25
Norwalk 25
Ottawa 25
Andover 24
Denver 24
Dhaka 24
Amsterdam 23
Shenyang 23
Brussels 22
Hangzhou 22
Lahore 22
Lausanne 22
Sacramento 22
Atlanta 21
Changsha 21
Hebei 20
Jinan 20
Johannesburg 20
Naples 20
Turku 20
Warsaw 20
Kent 19
Lappeenranta 19
Pune 19
Tianjin 19
Washington 19
Jiaxing 18
Riyadh 18
Chennai 17
Mumbai 17
Quito 17
Monza 16
Redondo Beach 16
Rio de Janeiro 16
Stockholm 16
Totale 16.311
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Nome #
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 463
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 454
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 430
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 426
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 404
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 369
Optically reconfigurable polarized emission in Germanium 345
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 340
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 330
Dislocation-free SiGe/Si heterostructures 328
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 327
Slip trace-induced terrace erosion 319
A Structural Characterization of GaAs MBE Grown on Si Pillars 317
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 314
"Divide et impera" in detector technology 313
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 308
Strain engineering in Ge/GeSn core/shell nanowires 296
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 286
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 281
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 273
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 272
Accelerating simulations of strained-film growth by deep learning: Finite element method accuracy over long time scales 268
3D heteroepitaxy of mismatched semiconductors on silicon 266
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 266
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 262
Dynamics of pit filling in heteroepitaxy via phase-field simulations 260
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 259
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 257
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 257
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 257
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 255
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 253
Simulating morphological evolutions by Convolutional Neural Networks 251
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 250
Modelling the kinetic growth mode of GaAs nanomembranes 247
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film 247
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 246
Continuum modeling of heteroepitaxial growth in semiconductors 245
Continuum models of heteroepitaxial growth on patterned substrates 240
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 240
Continuum Modeling of cyclic growth in Ge/Si(001) heteroepitaxy 240
Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire 239
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 239
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 239
Anomalous Smoothing Preceding Island Formation During Growth on Patterned Substrates 238
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 237
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 235
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 233
Simulations of strained films evolution: extending accessible timescales through Convolutional Neural Networks 232
Ge Crystals on Si Show Their Light 232
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001) 229
Morphological evolution and compositional segregation effects in core-shell nanowires 229
Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals 227
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 225
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 223
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001) 223
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 222
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 220
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 215
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 212
Continuum modeling of Ge/Si heteroepitaxy in the presence of misfit dislocations 212
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 209
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals 208
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 207
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 207
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 206
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 206
Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability 205
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 203
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 202
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 202
Strain and strain-driven effects in coaxial nanowires 201
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 200
Modeling semiconductor heteroepitaxy: a continuum approach 199
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 196
Convolutional Recurrent Neural Networks for tackling materials dynamics at the mesoscale 194
Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates 193
Semiconductor heteroepitaxy 193
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach 193
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution 192
Strain relaxation in semiconductor core/shell nanowires 189
Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001) 187
Modeling simultaneous elastic and plastic relaxation during Ge deposition on Si(001) 187
Dynamics of pit filling in heteroepitaxy via phase-field simulations 187
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 185
The interplay of morphological and compositional evolution in crystal growth: a phase-field model 184
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films 183
Epitaxial Ge-crystal arrays for X-ray detection 182
ML-enabled boosting of growth simulations 180
Continuum model of cyclic growth induced by dislocations in SiGe/Si heteroepitaxy 180
Motion of crystalline inclusions by interface diffusion in the proximity of free surfaces 180
Optimal growth conditions for selective Ge islands positioning on pit-patterned Si(001) 179
Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired neural networks for the 3D microstructure evolution of materials via Cahn–Hilliard flow 178
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 178
Semiconductor Heteroepitaxy 178
Progressing strained layer growth by deep learning 176
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 175
Accelerating Crystal Growth Simulations by Convolutional Neural Networks 174
The interplay of morphological and compositional evolution in heteroepitaxy: a Phase-Field model 173
A Neural-Network surrogate for microstructure dynamics and crystal growth 170
Totale 24.243
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Categoria #
all - tutte 80.104
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 80.104
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.817 149 188 209 209 124 118 94 107 86 165 128 240
2022/20232.312 244 605 260 293 157 347 13 99 165 28 41 60
2023/20241.371 53 78 77 51 208 321 226 45 85 18 28 181
2024/20254.136 186 466 210 151 309 238 251 218 303 571 299 934
2025/20269.469 868 582 887 679 967 479 1.510 451 842 782 653 769
2026/202777 77 0 0 0 0 0 0 0 0 0 0 0
Totale 25.763