Bicocca Open Archive

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MIGLIO, LEONIDA
 Distribuzione geografica
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Continente #
NA - Nord America 35.633
AS - Asia 18.697
EU - Europa 14.310
SA - Sud America 2.511
AF - Africa 433
OC - Oceania 40
Continente sconosciuto - Info sul continente non disponibili 17
Totale 71.641
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Nazione #
US - Stati Uniti d'America 33.625
SG - Singapore 6.901
CN - Cina 4.032
HK - Hong Kong 2.742
VN - Vietnam 2.281
RU - Federazione Russa 2.264
IT - Italia 2.152
DE - Germania 2.081
SE - Svezia 1.895
BR - Brasile 1.866
CA - Canada 1.810
UA - Ucraina 1.540
IE - Irlanda 1.405
GB - Regno Unito 788
FR - Francia 647
IN - India 560
FI - Finlandia 484
KR - Corea 325
BD - Bangladesh 278
TR - Turchia 247
AR - Argentina 236
AT - Austria 209
ID - Indonesia 195
IQ - Iraq 188
ES - Italia 180
JP - Giappone 177
NL - Olanda 170
PK - Pakistan 144
ZA - Sudafrica 132
MX - Messico 116
EC - Ecuador 102
SA - Arabia Saudita 94
CO - Colombia 90
CH - Svizzera 88
DK - Danimarca 85
PH - Filippine 85
BE - Belgio 67
MA - Marocco 67
PL - Polonia 65
VE - Venezuela 62
UZ - Uzbekistan 58
CL - Cile 50
PY - Paraguay 40
TW - Taiwan 39
KE - Kenya 36
MY - Malesia 35
AU - Australia 33
ET - Etiopia 30
JO - Giordania 30
TN - Tunisia 30
IL - Israele 28
UY - Uruguay 28
DZ - Algeria 27
NP - Nepal 26
PE - Perù 26
EG - Egitto 25
OM - Oman 25
AE - Emirati Arabi Uniti 23
AZ - Azerbaigian 23
LT - Lituania 23
GR - Grecia 21
CZ - Repubblica Ceca 20
TH - Thailandia 20
KZ - Kazakistan 18
PS - Palestinian Territory 18
HU - Ungheria 17
LB - Libano 17
JM - Giamaica 15
KG - Kirghizistan 14
IR - Iran 13
CR - Costa Rica 12
EU - Europa 12
GE - Georgia 12
LY - Libia 12
PT - Portogallo 12
SC - Seychelles 12
AL - Albania 11
BG - Bulgaria 11
AO - Angola 10
BY - Bielorussia 10
PA - Panama 10
SN - Senegal 10
BO - Bolivia 9
CI - Costa d'Avorio 9
DO - Repubblica Dominicana 9
LV - Lettonia 9
NI - Nicaragua 9
RO - Romania 9
RS - Serbia 9
HN - Honduras 8
NO - Norvegia 8
BH - Bahrain 7
MN - Mongolia 7
ME - Montenegro 6
NG - Nigeria 6
SY - Repubblica araba siriana 6
KW - Kuwait 5
LA - Repubblica Popolare Democratica del Laos 5
NZ - Nuova Zelanda 5
TT - Trinidad e Tobago 5
Totale 71.548
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Città #
Ann Arbor 5.649
Singapore 3.652
Woodbridge 3.080
Hong Kong 2.691
Fairfield 2.350
Ashburn 2.253
Houston 2.066
Jacksonville 1.601
San Jose 1.570
Chandler 1.545
Frankfurt am Main 1.382
Toronto 1.363
Dublin 1.362
Wilmington 1.016
Santa Clara 975
Seattle 914
Dearborn 816
Milan 797
Cambridge 761
New York 678
Beijing 668
Princeton 668
Ho Chi Minh City 480
Chicago 479
The Dalles 470
Dong Ket 410
Hefei 403
Los Angeles 386
Hanoi 376
Nanjing 376
Dallas 359
Lauterbourg 295
Seoul 291
Lachine 261
Altamura 260
Council Bluffs 259
Lawrence 245
Shanghai 214
Buffalo 200
Moscow 197
Vienna 180
San Diego 174
Helsinki 171
São Paulo 164
Guangzhou 162
Boardman 148
Nanchang 128
Jakarta 115
Andover 112
Shenyang 109
Changsha 87
Hebei 86
Jinan 76
Baghdad 71
Huizen 69
Falls Church 67
Tianjin 66
Jiaxing 65
Da Nang 63
Orem 63
London 62
Zhengzhou 62
Norwalk 61
Haiphong 58
Phoenix 58
Tokyo 58
Hangzhou 54
Montreal 53
Brussels 52
Dresden 52
Ottawa 52
Brooklyn 50
Johannesburg 50
Chennai 49
Rio de Janeiro 48
Dhaka 47
Tashkent 45
Southend 43
Lahore 42
Rome 41
Mountain View 40
Pune 40
Mumbai 39
Brasília 38
Riyadh 38
New Delhi 37
Sacramento 37
Ningbo 36
Warsaw 36
Monza 35
Munich 35
Philadelphia 35
San Francisco 35
Redmond 34
Curitiba 32
Guayaquil 32
Stockholm 32
Boston 31
Nuremberg 31
University Park 31
Totale 47.735
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 450
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 442
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 440
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 426
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 416
In-plane selective area InSb–Al nanowire quantum networks 378
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 367
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers 367
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study 363
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations 360
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 355
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 354
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 352
Band-gap modifications of beta-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si(111) 346
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 345
Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001) 343
Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations 343
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 342
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations 341
Coordination-dependent tight-binding potentials for carbon-based materials 331
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 331
Photonic Properties of Self-Assembled Semiconductor Microstructures 324
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 323
Dislocation-free SiGe/Si heterostructures 323
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 322
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 322
A Structural Characterization of GaAs MBE Grown on Si Pillars 312
"Divide et impera" in detector technology 309
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 309
Integration of MOSFETs with SiGe dots as stressor material 306
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 302
Hexagonal Diamond phase of Si and Ge by nanoindentation 298
Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations 296
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 289
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 287
Strain engineering in Ge/GeSn core/shell nanowires 287
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 282
Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si1-xGex(001) epitaxial layers 280
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates 278
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 278
Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates 278
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 276
Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se 2 thin film solar cells 271
Self-ordering of a Ge island single layer induced by Si overgrowth 269
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 269
Localized surface optical phonons in a layered crystal - gase(001) 268
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 268
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 267
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 265
Spontaneous Ge island ordering promoted by partial silicon capping 264
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se 2 thin film solar cells 264
Vertical and lateral ordering of Ge islands grown on Si(001): Theory and experiments 262
Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates 262
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 261
Dispersion relations of surface phonons in LiF(001) and NaF(001) 261
Dislocation recombination and surface passivation of Ge micro-crystals on Si 260
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation 259
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 259
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 259
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 259
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 257
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 257
3D heteroepitaxy of mismatched semiconductors on silicon 256
Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset 254
Thermal-hydrogen promoted selective desorption and enhanced mobility of adsorbed radicals in silicon film growth 253
Point defects and stacking faults in TiSi2 phases by tight binding molecular dynamics 253
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe 252
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays 251
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 251
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates 249
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 249
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy 247
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 247
Microscopic environment of Fe in epitaxially stabilized c-FeSi 246
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 244
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 243
Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation 242
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 242
Strained MOSFETs on ordered SiGe dots 242
Perfect crystals grown from imperfect interfaces 242
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 241
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 241
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 241
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers 241
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 240
New evidence for the folding of surface phonon modes in quasimonatomic crystals from He time-of-flight measurements in NaF 240
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility 240
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 239
Space-filling Arrays of Three-Dimensional Epitaxial Ge and Si 1-xGe x Crystals 239
Modelling the kinetic growth mode of GaAs nanomembranes 239
Energy distribution in Ge islands on Si(001): A spectral and site-resolved analysis versus size and morphology 238
Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning 238
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 237
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 237
Continuum modeling of heteroepitaxial growth in semiconductors 237
On the helium-alkali halide surface-potential - surface corrugation vs ionic size 235
Electric-Field Effects on the Infrared-Absorption of H In A SiO2 Film 234
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 233
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 233
Sih and sioh electromodulation at si-sio2 interfaces in a multiple internal reflectance configuration 232
Totale 28.552
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Categoria #
all - tutte 228.931
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 228.931
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.531 0 0 0 0 0 0 0 0 0 0 340 1.191
2021/20224.608 305 478 796 477 216 283 265 240 203 276 330 739
2022/20236.738 811 1.896 666 688 490 954 59 291 460 72 196 155
2023/20244.291 152 165 229 129 634 1.020 790 156 458 57 83 418
2024/202510.621 648 1.353 561 501 819 569 403 473 1.137 1.442 900 1.815
2025/202621.402 1.887 1.590 1.904 1.978 2.410 1.197 3.266 1.304 2.103 1.957 1.806 0
Totale 72.753