BONERA, EMILIANO
 Distribuzione geografica
Continente #
NA - Nord America 14.156
AS - Asia 8.290
EU - Europa 5.839
SA - Sud America 973
AF - Africa 184
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 8
Totale 29.461
Nazione #
US - Stati Uniti d'America 13.481
SG - Singapore 2.733
CN - Cina 1.758
VN - Vietnam 1.482
IT - Italia 1.174
DE - Germania 1.146
HK - Hong Kong 1.037
RU - Federazione Russa 772
BR - Brasile 730
CA - Canada 591
SE - Svezia 547
IE - Irlanda 457
UA - Ucraina 381
GB - Regno Unito 370
IN - India 270
FR - Francia 256
FI - Finlandia 176
KR - Corea 160
AT - Austria 133
BD - Bangladesh 108
NL - Olanda 95
TR - Turchia 95
ID - Indonesia 94
JP - Giappone 89
AR - Argentina 81
PK - Pakistan 70
IQ - Iraq 69
ZA - Sudafrica 61
DK - Danimarca 55
ES - Italia 53
PH - Filippine 49
MX - Messico 45
SA - Arabia Saudita 45
BE - Belgio 43
PL - Polonia 41
CH - Svizzera 40
EC - Ecuador 39
CO - Colombia 34
TW - Taiwan 34
MA - Marocco 32
VE - Venezuela 24
MY - Malesia 21
CL - Cile 20
UZ - Uzbekistan 20
LT - Lituania 18
AE - Emirati Arabi Uniti 17
IL - Israele 17
PY - Paraguay 17
ET - Etiopia 16
KE - Kenya 16
TN - Tunisia 16
CZ - Repubblica Ceca 15
IR - Iran 15
EG - Egitto 12
NP - Nepal 12
UY - Uruguay 12
KZ - Kazakistan 11
AL - Albania 10
EU - Europa 9
JM - Giamaica 9
JO - Giordania 9
AZ - Azerbaigian 8
DZ - Algeria 8
GR - Grecia 8
TH - Thailandia 8
BG - Bulgaria 7
KG - Kirghizistan 7
LB - Libano 7
PE - Perù 7
RS - Serbia 7
BO - Bolivia 6
DO - Repubblica Dominicana 6
HN - Honduras 6
MM - Myanmar 6
AU - Australia 5
CI - Costa d'Avorio 5
OM - Oman 5
PA - Panama 5
BN - Brunei Darussalam 4
BY - Bielorussia 4
CR - Costa Rica 4
LA - Repubblica Popolare Democratica del Laos 4
LK - Sri Lanka 4
LV - Lettonia 4
NI - Nicaragua 4
SK - Slovacchia (Repubblica Slovacca) 4
GA - Gabon 3
HR - Croazia 3
HU - Ungheria 3
KH - Cambogia 3
KW - Kuwait 3
ME - Montenegro 3
MU - Mauritius 3
NZ - Nuova Zelanda 3
PS - Palestinian Territory 3
RO - Romania 3
SN - Senegal 3
SY - Repubblica araba siriana 3
BH - Bahrain 2
EE - Estonia 2
Totale 29.425
Città #
Ann Arbor 2.713
Singapore 1.708
Ashburn 1.114
Woodbridge 1.026
Hong Kong 996
San Jose 916
Fairfield 736
Frankfurt am Main 712
Chandler 603
Houston 515
Dublin 436
Jacksonville 435
Toronto 434
Milan 416
Ho Chi Minh City 410
Wilmington 390
Hanoi 356
Santa Clara 345
Beijing 300
New York 294
Seattle 283
Los Angeles 277
Dallas 260
Cambridge 258
Dearborn 227
Princeton 193
Chicago 181
Hefei 181
The Dalles 169
Shanghai 140
Seoul 137
Nanjing 136
Vienna 115
Lauterbourg 108
Council Bluffs 101
Buffalo 92
Dong Ket 92
Lawrence 77
Kent 75
Altamura 73
Helsinki 72
Lachine 72
São Paulo 69
Jakarta 58
Rome 58
Haiphong 57
Moscow 54
Da Nang 53
Guangzhou 53
Munich 51
San Diego 49
Orem 46
Southend 44
Nanchang 43
London 40
Tokyo 40
Montreal 38
Andover 37
Boardman 37
Brussels 33
Nuremberg 33
Shenyang 33
Phoenix 32
Brooklyn 30
Grafing 30
Jinan 29
Warsaw 29
Denver 28
Pune 27
Atlanta 26
Baghdad 26
Huizen 26
Jiaxing 25
Zurich 25
Chennai 24
Brescia 23
Hebei 23
Can Tho 22
Changsha 22
Taipei 22
Tianjin 22
Amsterdam 21
Charlotte 21
Ha Long 21
Johannesburg 21
Lahore 21
Ardea 20
Dhaka 20
Düsseldorf 20
Hải Dương 20
Norwalk 20
Quận Bình Thạnh 20
Thái Nguyên 20
Fuzhou 19
Mumbai 19
Biên Hòa 18
Elk Grove Village 18
Hangzhou 18
Tashkent 18
Falls Church 17
Totale 19.963
Nome #
From optical response to thermal properties: investigating Xenes and their heterostructures 745
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 499
Thickness determination of anisotropic van der Waals crystals by Raman spectroscopy: the case of black phosphorus 466
Stability and universal encapsulation of epitaxial Xenes 447
Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate 445
Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals 433
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 403
Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles 383
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source 372
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 370
Circular photogalvanic effect in large-scale tellurium thin films 367
High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy 366
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 352
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 349
Solid-state dewetting dynamics of amorphous ge thin films on silicon dioxide substrates 343
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 337
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 331
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 331
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 330
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 323
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 322
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 321
High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy 321
A Structural Characterization of GaAs MBE Grown on Si Pillars 312
Integration of MOSFETs with SiGe dots as stressor material 306
THz higher-order topological photonics in Ge-on-Si heterostructures 305
Embedding epitaxial (blue) phosphorene in between device-compatible functional layers 304
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 302
Ordered Arrays of SiGe Islands from Low-Energy PECVD 301
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 299
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 297
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 294
Tensile strain in Ge membranes induced by SiGe nanostressors 294
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 289
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 287
Conductive n-type gallium nitride thin films prepared by sputter deposition 287
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 285
Raman efficiency in SiGe alloys 282
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 281
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 279
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 276
Excitonic fine structure in GaAs/AlGaAs (111) quantum dots grown by droplet epitaxy 274
Optothermal Raman Spectroscopy of Black Phosphorus on a Gold Substrate 273
SiGe nano-stressors for Ge strain-engineering 272
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 271
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 268
Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy 265
SiGe nanostructures inducing tensile strain in suspended germanium membranes. 264
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 260
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 260
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 257
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 257
Phonon strain shift coefficients in SixGe1-x alloys 256
Substrate strain manipulation by nanostructure perimeter forces 251
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 248
Thermal properties of Xenes measured by optothermal Raman spectroscopy. 243
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching 243
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 242
Determination of Raman Efficiency in SiGe Alloys 236
Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers 235
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 234
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 232
Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures 226
Strain release management in SiGe/Si films by substrate patterning 226
Near-field optical imaging of electromigration damages in passivated metal stripes 223
How Oxygen Absorption Affects the Al2O3-Encapsulated Blue Phosphorene–Au Alloy 223
Band alignment at the La2Hf2O7/(001)Si interface 221
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 221
Bendable Silicene Membranes 220
EPR and UV-Raman study of BPSG thin films: structure and defects 220
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 218
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 218
Lithographically defined low dimensional SiGe nanostripes as silicon stressors 217
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 217
Ge-based photonics for quantum technologies 212
Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition 212
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets 211
Effective Out‐Of‐Plane Thermal Conductivity of Silicene by Optothermal Raman Spectroscopy 210
Optical and thermal responses of silicene in Xene heterostructures 210
Crystal defects and junction properties in the evolution of device fabrication technology 207
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3 206
Thermal properties of Xenes measured by optothermal Raman spectroscopy. 201
Phosphorous-oxygen hole centers in phosphosilicate glass films 198
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 197
Raman stress maps from finite-element models of silicon structures 195
Probing the Laser Ablation of Black Phosphorus by Raman Spectroscopy 194
Atomic layer deposition of Lu silicate films using {[(Me3Si)(2)N](3)Lu} 192
Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects 191
Renishaw Application Note : Imaging of silicon stress in microelectronics using Raman spectroscopy 188
Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies 188
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers 186
Spin Pumping in Epitaxial Ge1-xSnx Alloys 183
Formation of C-centers in silicon by light ion irradiation 183
Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon 183
A novel 0.16 um 300 V SOIBCD for ultrasound medical applications 181
Combining high resolution and tensorial analysis in Raman stress measurements of silicon 176
Raman spectroscopy of strain in subwavelength microelectronic devices 173
Atomic-layer deposition of Lu2O3 173
Stress mapping in silicon: Advantages of using a Raman spectrometer with a single dispersive stage 170
Development of a combined confocal and scanning near-field Raman microscope for deep UV laser excitation 169
Totale 27.216
Categoria #
all - tutte 89.916
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 89.916


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021486 0 0 0 0 0 0 0 0 0 0 172 314
2021/20221.756 143 184 193 110 86 193 128 87 80 149 132 271
2022/20232.626 325 773 329 261 147 358 27 114 161 14 81 36
2023/20241.591 58 59 79 41 203 418 302 72 112 16 19 212
2024/20254.027 152 466 259 170 300 236 181 185 350 638 267 823
2025/202611.427 1.559 940 1.019 1.008 1.345 518 1.894 498 954 1.023 669 0
Totale 30.026