Bicocca Open Archive

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FANCIULLI, MARCO
 Distribuzione geografica
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Continente #
NA - Nord America 19.117
AS - Asia 9.894
EU - Europa 9.232
SA - Sud America 1.404
AF - Africa 228
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 7
Totale 39.894
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Nazione #
US - Stati Uniti d'America 17.979
SG - Singapore 3.482
SE - Svezia 2.483
CN - Cina 2.207
IT - Italia 1.604
HK - Hong Kong 1.384
VN - Vietnam 1.230
RU - Federazione Russa 1.206
DE - Germania 1.081
BR - Brasile 1.071
CA - Canada 1.016
UA - Ucraina 570
IE - Irlanda 558
GB - Regno Unito 466
FR - Francia 427
IN - India 333
BD - Bangladesh 252
FI - Finlandia 200
KR - Corea 179
NL - Olanda 141
AT - Austria 120
AR - Argentina 117
IQ - Iraq 117
TR - Turchia 107
ID - Indonesia 94
JP - Giappone 86
PK - Pakistan 83
ES - Italia 67
MX - Messico 64
ZA - Sudafrica 64
SA - Arabia Saudita 63
BE - Belgio 60
DK - Danimarca 60
PL - Polonia 57
CO - Colombia 49
PH - Filippine 47
EC - Ecuador 46
UZ - Uzbekistan 38
CH - Svizzera 34
MY - Malesia 28
VE - Venezuela 28
KE - Kenya 27
CL - Cile 25
EG - Egitto 23
MA - Marocco 23
PY - Paraguay 22
LT - Lituania 21
UY - Uruguay 21
DZ - Algeria 20
CZ - Repubblica Ceca 19
JM - Giamaica 19
TW - Taiwan 18
TN - Tunisia 16
AE - Emirati Arabi Uniti 14
ET - Etiopia 14
AZ - Azerbaigian 13
NP - Nepal 13
PE - Perù 13
BO - Bolivia 12
IR - Iran 12
IL - Israele 10
LB - Libano 10
PS - Palestinian Territory 10
JO - Giordania 9
AU - Australia 8
BB - Barbados 8
KZ - Kazakistan 8
PT - Portogallo 8
RO - Romania 8
TH - Thailandia 8
CR - Costa Rica 7
HR - Croazia 7
OM - Oman 7
EE - Estonia 6
GA - Gabon 6
AM - Armenia 5
CI - Costa d'Avorio 5
EU - Europa 5
GR - Grecia 5
SY - Repubblica araba siriana 5
BG - Bulgaria 4
BJ - Benin 4
DO - Repubblica Dominicana 4
GT - Guatemala 4
HU - Ungheria 4
KG - Kirghizistan 4
LY - Libia 4
MU - Mauritius 4
SC - Seychelles 4
TT - Trinidad e Tobago 4
AO - Angola 3
MN - Mongolia 3
NI - Nicaragua 3
NZ - Nuova Zelanda 3
RS - Serbia 3
SV - El Salvador 3
AL - Albania 2
BH - Bahrain 2
BY - Bielorussia 2
GE - Georgia 2
Totale 39.854
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Città #
Ann Arbor 2.698
Singapore 2.064
Stockholm 1.864
Dallas 1.454
Woodbridge 1.352
Hong Kong 1.350
Ashburn 1.348
Fairfield 1.078
San Jose 948
Houston 922
Toronto 772
Wilmington 688
Frankfurt am Main 620
Jacksonville 617
Chandler 569
Dublin 524
Seattle 489
Milan 476
Cambridge 383
New York 381
Dearborn 323
Beijing 319
Ho Chi Minh City 317
Los Angeles 268
Santa Clara 266
Princeton 264
Hefei 262
Chicago 244
The Dalles 234
Hanoi 230
Nanjing 174
Dong Ket 158
Seoul 158
Lauterbourg 148
Altamura 142
Buffalo 140
Rome 125
Lawrence 121
Council Bluffs 118
Shanghai 117
Hangzhou 116
Lachine 109
Vienna 103
Moscow 97
São Paulo 97
San Diego 89
Boardman 77
Orem 74
Guangzhou 69
Helsinki 65
Nanchang 63
Munich 60
London 56
Shenyang 50
Jakarta 49
Warsaw 49
Tokyo 48
Ottawa 47
Baghdad 44
Chennai 42
Hebei 42
Jiaxing 41
Phoenix 41
Andover 39
Montreal 39
Huizen 36
Atlanta 35
Brooklyn 35
Jinan 35
Da Nang 34
Tashkent 34
Amsterdam 33
Changsha 33
Rio de Janeiro 33
Brussels 32
Haiphong 32
Norwalk 31
Nuremberg 31
Dhaka 30
Florence 30
Washington 30
Jeddah 29
Pune 29
Tianjin 29
Curitiba 27
Grafing 27
Johannesburg 27
Denver 26
Mountain View 26
Turin 26
Sacramento 24
Boston 23
Lahore 23
Manchester 23
Figino 22
Kent 22
Nairobi 22
Pisa 22
Biên Hòa 20
Falls Church 20
Totale 27.322
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Nome #
A 0.46 nV/√Hz JFET Low-Noise Amplifier for Characterization of Nanoelectrode Coating Materials 3.384
Bright Blue Emitting Cu-Doped Cs2ZnCl4 Colloidal Nanocrystals 536
Silicene field-effect transistors operating at room temperature 518
Trap-Mediated Two-Step Sensitization of Manganese Dopants in Perovskite Nanocrystals 463
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 456
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 442
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 438
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching 437
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing 437
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 433
Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles 388
Optical and Magneto-Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals 357
Design and Simulation of a Transmon Qubit Chip for Axion Detection 345
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 337
Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals 335
Colloidal Synthesis of Double Perovskite Cs2AgInCl6 and Mn-Doped Cs2AgInCl6 Nanocrystals 332
Hindering the Oxidation of Silicene with Non-Reactive Encapsulation 331
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface 326
Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface 318
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 313
Long-lived conduction electron spins in Ge quantum wells 307
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 296
Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance 294
Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111) 293
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 291
Electron spin resonance on a 2D van der Waals CrBr3 uniaxial ferromagnet 289
Local Electronic Properties of Corrugated Silicene Phases 287
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 285
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 284
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 277
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 275
Exploring the morphological and electronic properties of silicene superstructures 275
Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon 274
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 274
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO 2 interface after capping with Al 2 O 3 layer 273
Defects and Dopants in Silicon and Germanium Nanowires 273
Thermal resistance measurement of In3SbTe2 nanowires 269
Defects and Dopants in Silicon and Germanium Nanowires 264
Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics 263
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface 263
Defects and dopants in silicon nanowires produced by metal-assisted chemical etching 262
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode 261
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface 260
High-k dielectrics for CMOS and emerging logic devices 258
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition 256
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 254
Electrical characterization of thin silicon-on-insulator films doped by means of phosphorus end-terminated polymers 253
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (1 0 0)Ge/GeO2 interface 252
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 252
Microscopic environment of Fe in epitaxially stabilized c-FeSi 249
Structural and chemical stabilization of the epitaxial silicene 246
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 245
Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations 244
Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires 244
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 239
Magnetic Transitions and Energy Transfer Processes in Sb-Based Zero-Dimensional Metal Halide Nanocrystals Doped with Manganese 236
Valley blockade and multielectron spin-valley Kondo effect in silicon 235
Spin-dependent transport in dopant network processing units 233
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 233
Electron spin resonance of substitutional nitrogen in silicon 229
Metal organic chemical vapor deposition of phase change Ge 1Sb 2Te 4 nanowires 226
Spin-dependent recombination and single charge dynamics in silicon nanostructrures 226
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 225
EPR and UV-Raman study of BPSG thin films: structure and defects 224
Towards Oxide Electronics: a Roadmap 223
Band alignment at the La2Hf2O7/(001)Si interface 222
MOCVD growth and structural characterization of In-Sb-Te nanowires 222
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation 220
Investigation of the Si/SiO2 interface in silicon nanowires and its role in donor deactivation and charge transport 219
Electronic properties of pristine and se doped [001] silicon nanowires: An ab initio study 218
Silicon nanowires: Donors, surfaces and interface defects 216
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 214
Theoretical aspects of graphene-like group IV semiconductors 214
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires (invited) 212
Vibrational properties of epitaxial silicene layers on (111) Ag 212
Pulsed laser deposition of ultrathin BaTiO3/Fe bi-layers: Structural characterization and piezoelectric response 211
Self-organized layered structure in epitaxially stabilized FeSi 211
Microwave Effects in Silicon Low Dimensional Nanostructures 209
A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me = Zr, Hf) 209
Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe5−δGeTe2/Bi2Te3 heterostructures 208
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3 208
Confinement Effects and Hyperfine Structure in Se Doped Silicon Nanowires 208
Fe charge state adjustment in ZnO upon ion implantation 207
Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation 207
Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions 206
ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures 206
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 206
Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 204
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 204
Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy 202
Few electron limit of n-type metal oxide semiconductor single electron transistors 201
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition 201
Cu+→ Mn2+ Energy Transfer in Cu, Mn Coalloyed Cs3ZnCl5Colloidal Nanocrystals 200
Revealing 2D Magnetism in a Bulk CrSBr Single Crystal by Electron Spin Resonance 200
Phosphorous-oxygen hole centers in phosphosilicate glass films 199
Raman stress maps from finite-element models of silicon structures 197
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 196
The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si 195
Atomic layer deposition of Lu silicate films using {[(Me3Si)(2)N](3)Lu} 194
Atomic layer deposited TiO2 for implantable brain-chip interfacing devices 194
Totale 29.849
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Categoria #
all - tutte 122.882
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 122.882
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.176 185 223 316 133 95 168 185 135 121 147 159 309
2022/20232.858 377 826 309 197 208 402 38 116 197 41 85 62
2023/20241.913 56 54 80 52 262 479 300 102 219 43 39 227
2024/20255.447 324 597 221 230 372 276 392 249 511 870 407 998
2025/202616.933 1.360 1.207 1.986 1.313 1.567 706 1.890 668 1.102 3.101 1.100 933
2026/202756 56 0 0 0 0 0 0 0 0 0 0 0
Totale 40.520