PIZZINI, SERGIO
 Distribuzione geografica
Continente #
NA - Nord America 7.769
AS - Asia 3.343
EU - Europa 2.740
SA - Sud America 431
AF - Africa 65
Continente sconosciuto - Info sul continente non disponibili 14
OC - Oceania 6
Totale 14.368
Nazione #
US - Stati Uniti d'America 7.304
SG - Singapore 1.306
CN - Cina 791
SE - Svezia 496
CA - Canada 437
DE - Germania 437
HK - Hong Kong 406
RU - Federazione Russa 377
UA - Ucraina 343
IE - Irlanda 337
VN - Vietnam 329
BR - Brasile 319
IT - Italia 308
GB - Regno Unito 148
IN - India 114
FR - Francia 93
FI - Finlandia 86
TR - Turchia 72
KR - Corea 65
BD - Bangladesh 59
AR - Argentina 44
NL - Olanda 37
IQ - Iraq 35
ZA - Sudafrica 28
PK - Pakistan 23
ID - Indonesia 19
JP - Giappone 19
CO - Colombia 16
EC - Ecuador 16
BE - Belgio 15
MX - Messico 15
ES - Italia 13
PH - Filippine 13
EU - Europa 12
MY - Malesia 12
UZ - Uzbekistan 12
VE - Venezuela 12
CZ - Repubblica Ceca 9
PL - Polonia 9
SA - Arabia Saudita 9
KE - Kenya 8
CL - Cile 7
MA - Marocco 7
AU - Australia 6
NP - Nepal 6
PY - Paraguay 6
TH - Thailandia 6
UY - Uruguay 6
AE - Emirati Arabi Uniti 5
AZ - Azerbaigian 5
BH - Bahrain 5
IR - Iran 5
LT - Lituania 5
AL - Albania 4
BO - Bolivia 4
JO - Giordania 4
PS - Palestinian Territory 4
RS - Serbia 4
TW - Taiwan 4
AT - Austria 3
CH - Svizzera 3
EG - Egitto 3
ET - Etiopia 3
JM - Giamaica 3
KZ - Kazakistan 3
LB - Libano 3
MU - Mauritius 3
SN - Senegal 3
A2 - ???statistics.table.value.countryCode.A2??? 2
CR - Costa Rica 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
GE - Georgia 2
HN - Honduras 2
IL - Israele 2
MD - Moldavia 2
OM - Oman 2
SV - El Salvador 2
TN - Tunisia 2
AO - Angola 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
BS - Bahamas 1
EE - Estonia 1
GA - Gabon 1
GR - Grecia 1
HR - Croazia 1
HU - Ungheria 1
LU - Lussemburgo 1
LV - Lettonia 1
MG - Madagascar 1
MN - Mongolia 1
NG - Nigeria 1
PE - Perù 1
PR - Porto Rico 1
PT - Portogallo 1
QA - Qatar 1
RO - Romania 1
SO - Somalia 1
Totale 14.367
Città #
Ashburn 801
Singapore 761
Ann Arbor 727
Woodbridge 684
Houston 631
Fairfield 604
Chandler 459
Hong Kong 404
Toronto 350
Jacksonville 348
Dublin 327
San Jose 310
Frankfurt am Main 287
Santa Clara 234
Seattle 233
Wilmington 196
Cambridge 191
Dearborn 169
New York 143
Beijing 123
Princeton 120
Dallas 116
Hefei 104
Chicago 92
Ho Chi Minh City 76
Milan 74
Hanoi 63
Seoul 61
Nanjing 59
Lachine 57
Shanghai 57
The Dalles 56
Dong Ket 54
Altamura 53
Lawrence 53
Los Angeles 53
Council Bluffs 52
Lauterbourg 48
Buffalo 33
São Paulo 30
Moscow 29
Helsinki 28
Boardman 26
Rome 26
Fremont 24
Huizen 24
Nanchang 22
Andover 21
Hebei 21
San Diego 21
Columbus 20
Tianjin 19
Changsha 18
Philadelphia 18
Shenyang 18
Washington 18
Guangzhou 16
Ottawa 16
Jiaxing 15
Brussels 14
Falls Church 14
Atlanta 13
Zhengzhou 13
Baghdad 12
Dhaka 12
Kocaeli 12
London 12
Mountain View 12
Norwalk 12
Rio de Janeiro 12
Haiphong 11
Jinan 10
San Francisco 10
Tokyo 10
Da Nang 9
Hangzhou 9
Kent 9
Lahore 9
Munich 9
Ningbo 9
Olomouc 9
San Mateo 9
Tashkent 9
Guayaquil 8
Nairobi 8
New Delhi 8
Salt Lake City 8
Warsaw 8
Amsterdam 7
Bengaluru 7
Buenos Aires 7
Campinas 7
Caxias do Sul 7
Delhi 7
Istanbul 7
Orem 7
Tampa 7
University Park 7
Cape Town 6
Chandigarh 6
Totale 10.075
Nome #
Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration 339
Structural characterization of nc-Si films grown by low-energy PECVD on different substrates 336
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 332
Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon 309
The origin of photoluminescence from oxygen precipitates nucleated at low temperature in semiconductor silicon 309
Luminescence of Dislocations and Oxide Precipitates in Si 307
Photovoltaic quantum efficiency enhancement by light harvesting of organo-lanthanide complexes 298
Defect studies on silicon and silicon–germanium for PV and optoelectronic applications 292
Optical properties of shuffle dislocations in silicon 285
Advances in silicon surface characterisation using light beam injection techniques 284
Fast LBIC in-line characterization for process quality control in the photovoltaic industry 282
Interfacial issues in the design and the making of solid state chemical sensors 279
Photoluminescence of dislocations in nitrogen doped Czochralski silicon 278
Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers 278
Nanocrystalline silicon films grown by low energy plasma enhanced chemical vapor deposition for optoelectronic applications 278
Effect of high pressure isostatic annealing on oxygen segregation in Czochralski silicon 275
Surface microcharacterization of silicon wafers by the light-beam-induced current technique in the planar configuration and by attenuated total reflection spectroscopy 275
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 272
Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy 272
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 267
Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon 265
Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments 265
Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications 263
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 262
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition 262
Local structure of erbium-oxygen complexes in erbium-doped silicon and its correlation with the optical activity of erbium 261
Beam injection studies of dislocations and oxygen precipitates in semiconductor silicon 260
Electronic transitions at defect states in Cz p -type silicon 259
Characterization of Nanocrystalline Silicon Film grown by LEPECVD for Photovoltaic Applications 256
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 253
On the accurate calibration of an electrochemical oxygen meter in the 10-7 bar range 248
Preparation, structure and electrical properties of thick ruthenium dioxide films 239
About the use of nonstoichiometric CeO2 as oxygen sensitive electrode in an electrochemical solid state oxygen meter, 238
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy 235
Optical properties of oxygen precipitates and dislocations in silicon 230
About the use of a solid state electrochemical oxygen pump for selective oxidation of organic materials 230
A novel approach to the oxygen activity microdetermination of oxides by e.m.f. measurements 227
Structural homogeneity of nc-Si films grown by LEPECVD 226
Influence of cell geometry on the shape of polarization curves of porous Pt electrodes on a YSZ electrolyte 222
Electrical conductivity of HTaWO6• H2O and HTaWO6 221
Gas phase electrocatalytic oxidation of SO2 by solid state electrochemical technique 221
SPECTROMAGNETIC EVIDENCE FOR SPATIAL CORRELATION OF COPPER CENTERS IN PHOSPHATE-GLASSES AND ITS EFFECT ON THE CHARGE-TRANSPORT PROCESSES 218
INFLUENCE OF EXTENDED DEFECTS AND IMPURITIES ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON 217
Segregation of impurities at grain boundaries and other compositional inhomogeneities in chill-casted silicon ingots 217
Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature 215
OPTICAL AND SPECTROMAGNETICAL PROPERTIES OF PHOSPHATE-GLASSES CONTAINING RUTHENIUM AND TITANIUM IONS 212
Electrochemical solid state sensor for SO2 determination in air 201
RELATIONSHIPS BETWEEN THE CATALYTIC PROPERTIES AND THE OVERVOLTAGE FOR THE OXYGEN ELECTRODE REACTION OF SOME SEMICONDUCTOR AND METALLIC OXIDES. 196
Influence of the structure and morphology on the sensitivity to nitrogen oxides of phthalocyanine thin-film resistivity sensors 193
The kinetics of oxidation reactions at solid electrolytes: influence of the electrode materials on the selectivity of the electrode reaction, 192
Structural, electrical and electrochemical characterisation of Ni-Pr oxide thick films, 188
Analysis of the High-Temperature Degradation of Gas Sensors Based on Oxide Semiconductors 181
Application of surface science to preparation and characterization of solid-state chemical sensors 179
Semiconductor gas sensors based on ZnO thick films 177
Solid state oxygen sensor 169
Gas phase electrocatalytic oxidation on benzene using a solid state electrochemical reactor 168
Ceramiche a base di ossido di zirconio e ossidi di terre rare 163
Reversible and Irreversible Voltage Manipulation of Interfacial Magnetic Anisotropy in Pt / Co /Oxide Multilayers 144
Group IV Semiconductors Materials Research: Growth, Characterization and Applications to Electronics and Spintronics 119
Coordination of zinc and copper in phosphate glasses by EXAFS 110
Totale 14.449
Categoria #
all - tutte 48.005
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.005


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022787 17 96 128 95 13 51 49 38 31 70 80 119
2022/20231.613 158 600 86 185 115 216 3 76 110 4 38 22
2023/2024955 35 28 37 31 146 286 212 30 37 8 6 99
2024/20251.690 105 208 102 71 133 91 46 81 135 293 120 305
2025/20264.345 321 297 387 364 365 234 601 256 430 393 404 293
2026/202721 21 0 0 0 0 0 0 0 0 0 0 0
Totale 14.449