Bicocca Open Archive

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GRILLI, EMANUELE ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 16.352
AS - Asia 6.836
EU - Europa 6.186
SA - Sud America 864
Continente sconosciuto - Info sul continente non disponibili 338
AF - Africa 163
OC - Oceania 11
Totale 30.750
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Nazione #
US - Stati Uniti d'America 15.429
SG - Singapore 2.532
CN - Cina 1.647
IT - Italia 1.006
DE - Germania 958
SE - Svezia 869
CA - Canada 816
RU - Federazione Russa 808
HK - Hong Kong 782
VN - Vietnam 763
BR - Brasile 633
IE - Irlanda 629
UA - Ucraina 584
GB - Regno Unito 461
IN - India 258
FR - Francia 253
FI - Finlandia 181
KR - Corea 170
AT - Austria 139
BD - Bangladesh 109
IQ - Iraq 88
AR - Argentina 86
NL - Olanda 79
TR - Turchia 68
JP - Giappone 61
PK - Pakistan 52
PL - Polonia 45
SA - Arabia Saudita 45
PH - Filippine 43
DK - Danimarca 41
MX - Messico 40
BE - Belgio 38
MA - Marocco 38
ZA - Sudafrica 38
ID - Indonesia 37
CO - Colombia 34
EC - Ecuador 32
ES - Italia 29
UZ - Uzbekistan 27
KE - Kenya 22
VE - Venezuela 22
MY - Malesia 20
CL - Cile 17
JM - Giamaica 16
AE - Emirati Arabi Uniti 14
CR - Costa Rica 14
DZ - Algeria 14
PY - Paraguay 14
EG - Egitto 13
NP - Nepal 13
TN - Tunisia 13
TW - Taiwan 13
IR - Iran 11
JO - Giordania 10
TH - Thailandia 10
CH - Svizzera 9
UY - Uruguay 9
AZ - Azerbaigian 8
IL - Israele 8
LT - Lituania 8
PE - Perù 8
AU - Australia 7
BO - Bolivia 7
HN - Honduras 7
LB - Libano 7
RO - Romania 7
MU - Mauritius 6
OM - Oman 6
PA - Panama 6
PS - Palestinian Territory 6
BG - Bulgaria 5
CZ - Repubblica Ceca 5
ET - Etiopia 5
HU - Ungheria 5
LV - Lettonia 5
NI - Nicaragua 5
BB - Barbados 4
HR - Croazia 4
KZ - Kazakistan 4
MM - Myanmar 4
NZ - Nuova Zelanda 4
RS - Serbia 4
TT - Trinidad e Tobago 4
DO - Repubblica Dominicana 3
GT - Guatemala 3
KG - Kirghizistan 3
MN - Mongolia 3
SN - Senegal 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
BN - Brunei Darussalam 2
CI - Costa d'Avorio 2
EU - Europa 2
GR - Grecia 2
GY - Guiana 2
KW - Kuwait 2
LU - Lussemburgo 2
Totale 30.390
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Città #
Ashburn 1.696
Ann Arbor 1.496
Singapore 1.485
Woodbridge 1.306
Fairfield 948
Chandler 846
San Jose 820
Hong Kong 767
Houston 757
Jacksonville 661
Toronto 618
Dublin 608
Frankfurt am Main 491
Santa Clara 404
Seattle 375
New York 373
Cambridge 363
Wilmington 363
Milan 355
Dearborn 346
Council Bluffs 287
Dallas 252
Beijing 245
Hefei 236
Princeton 228
Los Angeles 171
Chicago 168
Seoul 159
Nanjing 149
Hanoi 147
Shanghai 145
Dong Ket 139
Ho Chi Minh City 138
The Dalles 133
Vienna 131
Lachine 108
Lauterbourg 101
Lawrence 88
Altamura 82
Buffalo 82
Boardman 78
Rome 73
Andover 59
Munich 56
Philadelphia 55
Moscow 54
San Diego 51
Guangzhou 49
Southend 48
Nanchang 47
São Paulo 47
Helsinki 45
Brooklyn 42
Columbus 40
Baghdad 38
Shenyang 38
Brussels 36
Hebei 35
Atlanta 34
Changsha 34
Phoenix 34
London 32
Jinan 31
Huizen 30
Orem 30
Norwalk 28
Falls Church 27
Washington 27
Haiphong 25
Montreal 25
Tokyo 25
Jiaxing 24
Mountain View 24
Denver 23
Tashkent 23
Tianjin 23
Da Nang 22
Turku 22
Amsterdam 21
Ottawa 21
San Francisco 20
Dhaka 19
Johannesburg 19
Nairobi 19
Redondo Beach 19
Warsaw 19
Chennai 18
Detroit 18
Hangzhou 18
Mumbai 18
New Delhi 18
Nürnberg 18
Boston 17
Kent 16
Kraków 16
Riyadh 16
Figino 15
Kunming 15
Lahore 15
Salt Lake City 15
Totale 20.091
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Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 454
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 383
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 372
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 365
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 363
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 361
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 360
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 356
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 345
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 343
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 337
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 332
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 328
Long-lived conduction electron spins in Ge quantum wells 326
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 325
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 322
Optical spin injection and spin lifetime in Ge heterostructures 319
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 313
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 312
Raman efficiency in SiGe alloys 309
Optical spin injection and spin lifetime in Ge heterostructures 309
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 307
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 306
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 303
Valley-dependent spin polarization and long-lived electron spins in germanium 303
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 301
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 299
Characterization Studies of Purified HgI2 Precursors 299
Photoluminescence circular dichroism and spin polarization in Germanium 294
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 292
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 289
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 289
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 288
Dislocation recombination and surface passivation of Ge micro-crystals on Si 288
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 288
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 285
Thermal tunability of monolithic polymer microcavities 284
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 283
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 281
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 281
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 278
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 277
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 277
Self-aggregation of InAs quantum dots on (N11) GaAs substrates 276
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 276
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 274
Nonlinear Behavior of Josephson Traveling Wave Parametric Amplifiers 272
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 272
Phonon strain shift coefficients in SixGe1-x alloys 272
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 272
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 272
Raman Spectroscopy of Si1-xGex Epilayers 271
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 270
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 269
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: The (311)A case 267
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 267
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 265
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 264
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 264
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 263
Direct gap related optical transitions in Ge/SiGe quantum wells 262
Emission lineshape in strain free quantum dot 261
Optical spin injection in SiGe heterostructures 261
Spin-resolved study of direct band-gap recombination in bulk Ge 261
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 260
Optical spin orientation in SiGe heterostructures 259
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 256
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 256
Structural investigations of the α12 Si-Ge superstructure 255
InAs quantum dots grown on nonconventionally oriented GaAs substrates 254
Ge Crystals on Si Show Their Light 254
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 253
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 252
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 252
Determination of Raman Efficiency in SiGe Alloys 252
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 250
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 247
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 246
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 246
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 245
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 240
Robust optical orientation of spins in Ge/SiGe quantum wells 235
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 233
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 233
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 232
Quasi-3D Modelling of Concentrating Photovoltaic Solar Cell and Light Emitting Diode Front Contact Grid 231
Radiative recombination and optical spin orientation in GeSn epitaxial layers 231
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 229
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 228
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 226
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 226
Temperature dependence of the photoluminescence of single GaAs/AlGaAs concentric quantum ring structure 223
3D island nucleation behaviour on high index substrates 221
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 220
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 219
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 219
Ge/SiGe multiple quantum wells on high index Si substrates 219
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 218
Strain-induced shift of phonon modes in Si1-xGex alloys 214
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 214
Totale 27.805
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Categoria #
all - tutte 98.181
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 98.181
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022939 0 0 0 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20253.618 190 409 196 149 269 207 103 227 268 644 241 715
2025/20269.264 937 717 728 836 867 438 1.260 450 865 778 760 628
2026/20271.987 190 361 899 537 0 0 0 0 0 0 0 0
Totale 30.750